參數(shù)資料
型號(hào): IS62LV5128LL
廠商: Integrated Silicon Solution, Inc.
英文描述: 512K x 8 Low Power And Low Vcc CMOS Static RAM(512K x 8 低功耗和低Vcc CMOS靜態(tài)RAM)
中文描述: 為512k × 8低功耗和低成本嚇的CMOS靜態(tài)RAM(為512k × 8低功耗和低嚇的CMOS靜態(tài)RAM)的
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 58K
代理商: IS62LV5128LL
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. B
10/02/00
3
IS62LV5128LL
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
CC
T
BIAS
T
STG
P
T
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Parameter
Terminal Voltage with Respect to GND
Vcc related to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
Unit
V
V
°
C
°
C
W
0.5 to Vcc + 0.3
0.3 to +4.0
40 to +85
65 to +150
1
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 3.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
V
CC
= 3.0V, I
OH
=
1.0 mA
V
CC
= 3.0V, I
OL
= 2.1 mA
2.2
2.2
0.2
1
1
0.4
V
V
V
V
μA
μA
V
CC
+ 0.3
0.4
1
1
GND
V
IN
V
CC
GND
V
OUT
V
CC
, O
UTPUTS
Disabled
Note:
1. V
IL
=
2.0V for pulse width less than 10 ns.
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