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參數(shù)資料
| 型號(hào)： | IS62LV2568LL-85TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| 中文描述： | 256K X 8 STANDARD SRAM, 85 ns, PDSO32 |
| 封裝： | TSOP1-32 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | IS62LV2568LL-85TI |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
05/03/00
1
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
IS62LV2568LL
256K x 8 LOW POWER and LOW Vcc
CMOS STATIC RAM
ISSI
DESCRIPTION
The
ISSI
IS62LV2568LL is a low voltage, 262,144 words
by 8 bits, CMOS SRAM. It is fabricated using
ISS
I’s low
voltage, six transistor (6T),
CMOS technology.
The device
is
targeted
to satisfy the demands of the state-of-the-art
technologies such as cell phones and pagers.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation
can be reduced
down with CMOS input levels. Additionally, easy memory
expansion is provided by using Chip Enable and Output
Enable inputs,
CE
and
OE
. The active LOW Write Enable (
WE
)
controls both writing and reading of the memory.
The IS62LV2568LL is available in 32-pin TSOP (Type I),
STSOP (Type I), and 36-pin mini BGA.
FUNCTIONAL BLOCK DIAGRAM
FEATURES
Access times of 70 and 85 ns
CMOS low power operation:
— 120 mW (typical) operating
— 6 μW (typical) standby
Low data retention voltage: 2V (min.)
Output Enable (
OE
) and two Chip Enable
(
CE1
and CE2) inputs for ease in applications
TTL compatible inputs and outputs
Fully static operation:
— No clock or refresh required
Single 2.5V to 3.0V power supply
Available in 32-pin TSOP (Type I), STSOP (Type I),
and 36-pin mini BGA
APRIL 2000
A0-A17
CE1
CE2
OE
WE
256K x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
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| IS62LV2568LL-70HI | 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| IS62LV2568LL-85HI | 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| IS62LV2568LL-70H | 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| IS62LV2568LL-70T | 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| IS62LV2568LL-70TI | 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
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| IS62LV256AL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS62LV256AL-20J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS62LV256AL-20JI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS62LV256AL-20JL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS62LV256AL-20JLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K (32K x 8) 20ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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