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參數(shù)資料
| 型號： | IS62LV12816BLL-10B |
| 英文描述： | x16 SRAM |
| 中文描述： | x16的SRAM |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | IS62LV12816BLL-10B |
IS62LV25616LL
ISSI
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Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. A
05/04/01
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-70
-85
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
tRC
Read Cycle Time
70
—
85
—
ns
tAA
Address Access Time
—
70
—
85
ns
tOHA
Output Hold Time
10
—
15
—
ns
tACE
CE Access Time
—
70
—
85
ns
tDOE
OE Access Time
—
35
—
40
ns
tHZOE(2)
OE to High-Z Output
—
25
—
25
ns
tLZOE(2)
OE to Low-Z Output
5
—
5
—
ns
tHZCE(2)
CE to High-Z Output
0
25
0
25
ns
tLZCE(2)
CE to Low-Z Output
10
—
10
—
ns
tBA
LB, UB Access Time
—
70
—
85
ns
tHZB
LB, UB to High-Z Output
0
25
0
25
ns
tLZB
LB, UB to Low-Z Output
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4 to 2.2V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
相關PDF資料 |
PDF描述 |
|---|---|
| IS62LV12816BLL-10BI | x16 SRAM |
| IS62LV12816BLL-10T | x16 SRAM |
| IS62LV12816BLL-10TI | x16 SRAM |
| IS62LV12816BLL-55B | x16 SRAM |
| IS62LV12816BLL-55BI | x16 SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS62LV12816BLL-10BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62LV12816BLL-10T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62LV12816BLL-10TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62LV12816BLL-55B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62LV12816BLL-55BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
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