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參數(shù)資料
| 型號： | IS62LV12 16BLL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 128 K x 16 Low Voltage, Ultra Low Power CMOS SRAM(128 K x 16 低壓，極低功耗CMOS靜態(tài)RAM) |
| 中文描述： | 128畝× 16低電壓，超低功耗CMOS SRAM（128畝× 16低壓，極低功耗的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 119K |
| 代理商： | IS62LV12 16BLL |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/15/00
1
IS62LV12816BLL
ISSI
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
128K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC RAM
FEATURES
High-speed access time: 55, 70, 100 ns
CMOS low power operation
– 120 mW (typical) operating
– 6 μW (typical) CMOS standby
TTL compatible interface levels
Single 2.5V-3.45V V
CC
power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Available in the 44-pin TSOP (Type II) and
48-pin mini BGA (6mm x 8mm)
DESCRIPTION
The
ISSI
IS62LV12816BLL is a high-speed, 2,097,152-bit
static RAM organized as 131,072 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When
CE
is HIGH (deselected) or when
CE
is low and
both
LB
and
UB
are HIGH, the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS62LV12816BLL is packaged in the JEDEC standard
44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
NOVEMBER 2000
A0-A16
CE
OE
WE
UB
LB
128K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62LV12 16LL | 128 K x 16 CMOS SRAM(128 K x 16 CMOS靜態(tài)RAM) |
| IS62LV12816L-100B | 128K x 16 CMOS STATIC RAM |
| IS62LV12816L-100BI | 128K x 16 CMOS STATIC RAM |
| IS62LV12816L-100T | 128K x 16 CMOS STATIC RAM |
| IS62LV12816L-100TI | 128K x 16 CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62LV12816BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62LV12816BLL-10B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62LV12816BLL-10BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62LV12816BLL-10T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62LV12816BLL-10TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
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