參數(shù)資料
型號: IS61SF12836-10B
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: x36 Fast Synchronous SRAM
中文描述: 128K X 36 CACHE SRAM, 10 ns, PBGA119
封裝: PLASTIC, BGA-119
文件頁數(shù): 5/16頁
文件大?。?/td> 112K
代理商: IS61SF12836-10B
IS61SF12832
IS61SF12836
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
5
TRUTH TABLE
Address
Used
Operation
CE
CE2
CE2
ADSP
ADSC
ADV
WRITE
OE
DQ
Deselected, Power-down
Deselected, Power-down
Deselected, Power-down
Deselected, Power-down
Deselected, Power-down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
None
None
None
None
None
External
External
External
Next
Next
Next
Next
Next
Next
Current
Current
Current
Current
Current
Current
H
L
L
X
X
L
L
L
X
X
H
H
X
H
X
X
H
H
X
H
X
X
L
X
L
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
H
X
H
X
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
H
H
L
H
H
H
H
X
X
H
X
H
H
X
X
H
X
L
X
X
L
L
X
L
L
H
H
H
H
H
H
H
H
H
H
H
H
X
X
X
X
X
X
X
X
L
L
L
L
L
L
H
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
H
L
H
X
X
L
H
L
H
X
X
High-Z
High-Z
High-Z
High-Z
High-Z
Q
Q
D
Q
High-Z
Q
High-Z
D
D
Q
High-Z
Q
High-Z
D
D
Read
Write
Read
Read
Read
Read
Write
Write
Read
Read
Read
Read
Write
Write
PARTIAL TRUTH TABLE
Function
GW
BWE
BW1
BW2
BW3
BW4
Read
Read
Write Byte 1
Write All Bytes
Write All Bytes
H
H
H
H
L
H
L
L
L
X
X
H
L
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
相關(guān)PDF資料
PDF描述
IS61SF12836-10TQ x36 Fast Synchronous SRAM
IS61SF12836-10TQI x36 Fast Synchronous SRAM
IS61SF12836-12B x36 Fast Synchronous SRAM
IS61SF12836-12TQ x36 Fast Synchronous SRAM
IS61SF12836-12TQI x36 Fast Synchronous SRAM
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