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參數(shù)資料
| 型號(hào)： | IS61S6432-117TQ |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | Quadruple 2-Input Positive-OR Gates 14-SO -40 to 85 |
| 中文描述： | 64K X 32 CACHE SRAM, 5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 5/19頁 |
| 文件大?。?/td> | 140K |
| 代理商： | IS61S6432-117TQ |
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev.
B
06/28/01
5
IS61S6432
ISSI
INTERLEAVED BURST ADDRESS TABLE
(MODE = V
CCQ
or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
ABSOLUTE MAXIMUM RATINGS
(1,2,3)
Symbol
T
BIAS
T
STG
P
D
I
OUT
V
IN
, V
OUT
V
IN
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however, precautions
may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Parameter
Temperature Under Bias
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to GND for I/O Pins
Voltage Relative to GND for for Address and Control Inputs
Value
–
40 to +85
–
55 to +150
1.8
100
–
0.5 to V
CCQ
+ 0.3
–
0.5 to 5.5
Unit
°
C
°
C
W
mA
V
V
LINEAR BURST ADDRESS TABLE
(MODE = GND
Q
)
0,0
1,0
0,1
A1', A0' = 1,1
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0
°
C to +70
°
C
–
40
°
C to +85
°
C
V
CC
3.3V +10%,
–
5%
3.3V +10%,
–
5%
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| IS61S6432-117TQI | Quadruple 2-Input Positive-OR Gates 14-SO -40 to 85 |
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