參數(shù)資料
型號: IS61NP51218
廠商: Integrated Silicon Solution, Inc.
英文描述: 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
中文描述: 256K × 32,256K × 36和管道為512k × 18編號WAIT狀態(tài)總線的SRAM
文件頁數(shù): 6/20頁
文件大?。?/td> 157K
代理商: IS61NP51218
6
Integrated Silicon Solution, Inc.
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00E
04/26/01
IS61NP25632
IS61NLP25632
IS61NP25636
IS61NLP25636
IS61NP51218
IS61NLP51218
ISSI
SYNCHRONOUS TRUTH TABLE
(1)
Address
Used
Operation
CS
1
CS2
CS
2
ADV
WE
BW
x
OE
CKE
CLK
Not Selected Continue
Begin Burst Read
Continue Burst Read
NOP/Dummy Read
Dummy Read
Begin Burst Write
Continue Burst Write
NOP/Write Abort
Write Abort
Ignore Clock
Notes:
1. "X" means don't care.
2. The rising edge of clock is symbolized by
3. A continue deselect cycle can only be entered if a deselect cycle is executed first.
4.
WE
= L means Write operation in Write Truth Table.
WE
= H means Read operation in Write Truth Table.
5. Operation finally depends on status of asynchronous pins (ZZ and
OE
).
N/A
X
L
X
L
X
L
X
L
X
X
X
H
X
H
X
H
X
H
X
X
X
L
X
L
X
L
X
L
X
X
H
L
H
L
H
L
H
L
H
X
X
H
X
H
X
L
X
L
X
X
X
X
X
X
X
L
L
H
H
X
X
L
L
H
H
X
X
X
X
X
L
L
L
L
L
L
L
L
L
H
External Address
Next Address
External Address
Next Address
External Address
Next Address
N/A
Next Address
Current Address
BURST
READ
DESELECT
BURST
WRITE
BEGIN
READ
BEGIN
WRITE
READ
WRITE
READ
WRITE
BURST
BURST
BURST
DS
DS
DS
READ
DS
DS
READ
WRITE
WRITE
BURST
BURST
WRITE
READ
STATE DIAGRAM
相關(guān)PDF資料
PDF描述
IS61NP51218-133B 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NP51218-133BI 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NP51218-133TQ 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NP51218-133TQI 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NP51218-5B 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61NP51218-100TQ 制造商:Integrated Silicon Solution Inc 功能描述:
IS61NVF102418-6.5B3 功能描述:靜態(tài)隨機存取存儲器 18Mb,"No-Wait"/Flowthrough,Sync,1Mb x 18,6.5ns,2.5v - I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61NVF102418-6.5B3I 功能描述:靜態(tài)隨機存取存儲器 18Mb,"No-Wait"/Flowthrough,Sync,1Mb x 18,6.5ns,2.5v - I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61NVF102418-6.5B3I-TR 功能描述:靜態(tài)隨機存取存儲器 18Mb,"No-Wait"/Flowthrough,Sync,1Mb x 18,6.5ns,2.5v - I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61NVF102418-6.5B3-TR 功能描述:靜態(tài)隨機存取存儲器 18Mb,"No-Wait"/Flowthrough,Sync,1Mb x 18,6.5ns,2.5v - I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray