參數(shù)資料
型號: IS61NP25636-5BI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85
中文描述: 256K X 36 ZBT SRAM, 5 ns, PBGA119
封裝: PLASTIC, BGA-119
文件頁數(shù): 12/20頁
文件大?。?/td> 157K
代理商: IS61NP25636-5BI
12
Integrated Silicon Solution, Inc.
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00E
04/26/01
IS61NP25632
IS61NLP25632
IS61NP25636
IS61NLP25636
IS61NP51218
IS61NLP51218
ISSI
READ/WRITE CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-133
-100
Symbol
Parameter
Min. Max.
Min. Max.
Unit
fmax
Clock Frequency
133
100
MHz
t
KC
Cycle Time
7.5
10
ns
t
KH
Clock High Time
3
3
ns
t
KL
Clock Low Time
3
3
ns
t
KQ
Clock Access Time
4.2
5
ns
t
KQX
(2)
Clock High to Output Invalid
1.5
1.5
ns
t
KQLZ
(2,3)
Clock High to Output Low-Z
0
0
ns
t
KQHZ
(2,3)
Clock High to Output High-Z
3.5
3.5
ns
t
OEQ
Output Enable to Output Valid
4.2
5
ns
t
OELZ
(2,3)
Output Enable to Output Low-Z
0
0
ns
t
OEHZ
(2,3)
Output Disable to Output High-Z
3.5
3.5
ns
t
AS
Address Setup Time
1.5
1.5
ns
t
WS
Read/Write Setup Time
1.5
1.5
ns
t
CES
Chip Enable Setup Time
1.5
1.5
ns
t
SE
Clock Enable Setup Time
1.5
1.5
ns
t
AVS
Address Advance Setup Time
1.5
1.5
ns
t
DS
Data Setup Time
2.0
2.0
ns
t
AH
Address Hold Time
0.5
0.5
ns
t
HE
Clock EnableHold Time
0.5
0.5
ns
t
WH
Write Hold Time
0.5
0.5
ns
t
CEH
Chip Enable Hold Time
0.5
0.5
ns
t
ADVH
Address Advance Hold Time
0.5
0.5
ns
t
DH
Data Hold Time
0.5
0.5
ns
t
PDS
ZZ High to Power Down
2
2
cyc
t
PUS
ZZ Low to Power Down
2
2
cyc
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with load in Figure 2.
相關(guān)PDF資料
PDF描述
IS61NP25632-133TQ 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NP25632-133TQI 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NP25632-5B 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NP25632-5BI 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NP25632-5TQ 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61NP51218-100TQ 制造商:Integrated Silicon Solution Inc 功能描述:
IS61NVF102418-6.5B3 功能描述:靜態(tài)隨機存取存儲器 18Mb,"No-Wait"/Flowthrough,Sync,1Mb x 18,6.5ns,2.5v - I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61NVF102418-6.5B3I 功能描述:靜態(tài)隨機存取存儲器 18Mb,"No-Wait"/Flowthrough,Sync,1Mb x 18,6.5ns,2.5v - I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61NVF102418-6.5B3I-TR 功能描述:靜態(tài)隨機存取存儲器 18Mb,"No-Wait"/Flowthrough,Sync,1Mb x 18,6.5ns,2.5v - I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61NVF102418-6.5B3-TR 功能描述:靜態(tài)隨機存取存儲器 18Mb,"No-Wait"/Flowthrough,Sync,1Mb x 18,6.5ns,2.5v - I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray