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| 型號(hào)： | IS61NP12836-150TQ |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | PIPELINE NO WAIT STATE BUS SRAM |
| 中文描述： | 128K X 36 ZBT SRAM, 3.8 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁(yè)數(shù)： | 9/20頁(yè) |
| 文件大小： | 154K |
| 代理商： | IS61NP12836-150TQ |
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Integrated Silicon Solution, Inc.
—
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00C
11/30/00
9
IS61NP12832
IS61NLP12832
IS61NP12836
IS61NLP12836
IS61NP25618
IS61NLP25618
ISSI
OPERATING RANGE
Range
Commercial
Ambient Temperature
0
°
C to +70
°
C
V
CC
V
CCQ
3.3V ± 5%
3.3V ± 5%
3.3V ± 5%
3.3V ± 5%
2.5V ± 5%
3.3V ± 5%
Industrial
-40
°
C to +85
°
C
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-150*
MAX
x18
-133
MAX
-100
MAX
Symbol
Parameter
Test Conditions
x32/36
x18
x32/36
x18
x32/36
Uni
t
I
CC
AC Operating
Supply Current
Device Selected,
OE
= V
IH
, ZZ
≤
V
IL
,
All Inputs
≤
0.2V
OR
≥
V
CC
–
0.2V,
Cycle Time
≥
t
KC
min.
Com.
I
ND
.
380
—
380
—
350
—
350
—
300
350
300
350
mA
I
SB
Standby Current
TTL Input
Device Deselected,
V
CC
= Max.,
All Inputs
≤
0.2V
OR
≥
V
CC
–
0.2V,
ZZ
≤
V
IL
, f = Max.
C
OM
.
Ind.
105
—
105
—
90
—
90
—
80
90
80
90
mA
I
SBI
Standby Current
CMOS Input
Device Deselected,
V
CC
= Max.,
V
IN
≤
GND + 0.2V or
≥
V
CC
–
0.2V
f = 0
Com.
Ind.
20
—
20
—
20
—
20
—
20
25
20
25
mA
*This speed available only in NP version
Note:
1. MODE pin has an internal pullup and should be tied to Vcc or GND. It exhibits ±30 μA maximum leakage current when
tied to
≤
GND + 0.2V or
≥
Vcc
–
0.2V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
2.5V
3.3V
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
=
–
4.0 mA (3.3V)
I
OH
= 1.0 mA
2.0
—
2.4
—
V
(2.5V)
V
OL
Output LOW Voltage
I
OL
= 8.0 mA (3.3V)
I
OL
= 1.0 mA (2.5V)
—
0.4
—
0.4
V
V
IH
Input HIGH Voltage
1.7
V
CC
+ 0.3
2.0
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
–
0.3
0.7
–
0.3
0.8
V
I
LI
Input Leakage Current
GND
≤
V
IN
≤
V
CC
(1)
GND
≤
V
OUT
≤
V
CCQ
,
OE
= V
I
–
5
5
–
5
5
μA
I
LO
Output Leakage Current
–
5
5
–
5
5
μA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61NP12836-5B | PIPELINE NO WAIT STATE BUS SRAM |
| IS61NP12836-5TQ | PIPELINE NO WAIT STATE BUS SRAM |
| IS61NP25618 | PIPELINE NO WAIT STATE BUS SRAM |
| IS61NP25618-133B | PIPELINE NO WAIT STATE BUS SRAM |
| IS61NP25618-133TQ | PIPELINE NO WAIT STATE BUS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61NP51218-100TQ | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVF102418-6.5B3 | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb,"No-Wait"/Flowthrough,Sync,1Mb x 18,6.5ns,2.5v - I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61NVF102418-6.5B3I | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb,"No-Wait"/Flowthrough,Sync,1Mb x 18,6.5ns,2.5v - I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61NVF102418-6.5B3I-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb,"No-Wait"/Flowthrough,Sync,1Mb x 18,6.5ns,2.5v - I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61NVF102418-6.5B3-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb,"No-Wait"/Flowthrough,Sync,1Mb x 18,6.5ns,2.5v - I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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