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參數(shù)資料
| 型號： | IS61LV2568L-10KLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 256K X 8 STANDARD SRAM, 10 ns, PDSO36 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-36 |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 82K |
| 代理商： | IS61LV2568L-10KLI |
IS61LV2568L
ISSI
10
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
07/25/05
AC WAVEFORMS
WRITE CYCLE NO. 2
(1)
(
WE
Controlled,
OE
= HIGH during Write Cycle)
WRITE CYCLE NO. 3
(
WE
Controlled:
OE
is LOW During Write Cycle)
Note:
1. The internal Write time is defined by the overlap of
CE
= LOW and
WE
= LOW. All signals must be in valid states to initiate a Write, but any
can be deasserted to terminate the Write. The Data Input Setup and Hold timing is referenced to the rising or falling edge of the signal that
terminates the Write.
Note:
1. The internal Write time is defined by the overlap of
CE
= LOW and
WE
= LOW. All signals must be in valid states to initiate a Write, but any
can be deasserted to terminate the Write. The Data Input Setup and Hold timing is referenced to the rising or falling edge of the signal that
terminates the Write.
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
CE_WR2.eps
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
CE_WR3.eps
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| IS61LV2568L-10T | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568L-10TL | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568L-8K | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568L-8T | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568 | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV2568L-10KLI-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 256Kx8 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-10T | 功能描述:靜態(tài)隨機存取存儲器 2Mb 256Kx8 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-10TL | 功能描述:靜態(tài)隨機存取存儲器 2Mb 256Kx8 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-10TL-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 256Kx8 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-10T-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 256Kx8 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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