參數(shù)資料
型號(hào): IS61LV2568L-10KI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類(lèi): DRAM
英文描述: 256K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 256K X 8 STANDARD SRAM, 10 ns, PDSO36
封裝: 0.400 INCH, PLASTIC, MS-027, SOJ-36
文件頁(yè)數(shù): 4/14頁(yè)
文件大小: 82K
代理商: IS61LV2568L-10KI
IS61LV2568L
ISSI
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
07/25/05
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
C
I/O
Input Capacitance
Input/Output Capacitance
V
IN
= 0V
V
OUT
= 0V
6
8
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns
-10 ns
Min. Max.
Symbol
Parameter
Test Conditions
Min. Max.
Unit
I
CC
V
DD
Operating
Supply Current
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
Com.
Ind.
typ.
(2)
65
60
65
50
mA
50
I
SB
1
TTL Standby
Current
(TTL Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = max
Com.
Ind.
30
25
30
mA
I
SB
2
CMOS Standby
Current
(CMOS Inputs)
V
DD
= Max.,
CE
V
DD
– 0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V
, f = 0
Com.
Ind.
typ.
(2)
3
3
4
mA
mA
μ
A
700
700
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=3.3V, T
A
=25
0
C. Not 100% tested.
相關(guān)PDF資料
PDF描述
IS61LV2568L-10KLI 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10T 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10TL 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8T 256K x 8 HIGH-SPEED CMOS STATIC RAM
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IS61LV2568L-10T 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 256Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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