參數(shù)資料
型號: IS61LV2568
廠商: Integrated Silicon Solution, Inc.
英文描述: 256K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 256K × 8高速CMOS靜態(tài)RAM
文件頁數(shù): 2/8頁
文件大?。?/td> 88K
代理商: IS61LV2568
IS61LV2568
ISSI
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
PIN CONFIGURATION
36-Pin SOJ
PIN DESCRIPTIONS
A0-A17
Address Inputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Bidirectional Ports
Vcc
Power
GND
Ground
NC
No Connection
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
CC
V
TERM
T
BIAS
Parameter
Supply voltage with Respect to GND
Terminal Voltage with Respect to GND
Temperature Under Bias
Value
–0.5 to +4.6
–0.5 to Vcc + 0.5
–10 to +85
–45 to +90
–65 to +150
1.0
Unit
V
V
°C
Com.
Ind.
T
STG
P
D
Storage Temperature
Power Dissipation
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
TRUTH TABLE
Mode
WE
CE
OE
I/O Operation Vcc Current
Not Selected
(Power-down)
X
H
X
High-Z
I
SB
1
, I
SB
2
Output Disabled H
L
H
High-Z
I
CC
Read
H
L
L
D
OUT
I
CC
Write
L
L
X
D
IN
I
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
A4
A3
A2
A1
A0
CE
I/O0
I/O1
Vcc
GND
I/O2
I/O3
WE
A17
A16
A15
A14
A13
NC
A5
A6
A7
A8
OE
I/O7
I/O6
GND
Vcc
I/O5
I/O4
A9
A10
A11
A12
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A4
A3
A2
A1
A0
CE
I/O0
I/O1
Vcc
GND
I/O2
I/O3
WE
A17
A16
A15
A14
A13
NC
NC
NC
NC
NC
A5
A6
A7
A8
OE
I/O7
I/O6
GND
Vcc
I/O5
I/O4
A9
A10
A11
A12
NC
NC
NC
NC
44
43
42
41
44-Pin TSOP (Type II)
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