參數(shù)資料
型號(hào): IS61LV25616L
廠商: Integrated Silicon Solution, Inc.
英文描述: 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 256K × 16高速異步的CMOS靜態(tài)RAM為3.3V電源
文件頁數(shù): 8/11頁
文件大?。?/td> 74K
代理商: IS61LV25616L
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/28/02
IS61LV25616L
ISSI
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least one of
the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
)
[
(
LB
) = (
UB
)
]
(
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1
(
CE
Controlled,
OE
is HIGH or LOW)
(1 )
DATA UNDEFINED
t
WC
VALID ADDRESS
t
SCE
t
PWE1
t
PWE2
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR1.eps
相關(guān)PDF資料
PDF描述
IS61LV25616L-10LQI 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-10T 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-12KI 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-12TI 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-15K 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LV25616L-10LQI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-10T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-12KI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-12TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-15K 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY