參數(shù)資料
型號(hào)： IS61LV256-20J
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 32K x 8 LOW VOLTAGE CMOS STATIC RAM
中文描述： 32K X 8 STANDARD SRAM, 20 ns, PDSO28
封裝： 0.300 INCH, PLASTIC, SOJ-28
文件頁數(shù)： 3/8頁
文件大?。?/td> 100K
代理商： IS61LV256-20J
ISSI
IS61LV256
Integrated Silicon Solution, Inc.
Rev. F 0296
SR81995LV61
2-3
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –2.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 4.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
μ
A
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
Com.
Ind.
–2
–5
2
5
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
Com.
Ind.
–2
–5
2
5
μ
A
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
5
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-12 ns
Min. Max.
-15 ns
Min. Max.
-20 ns
Min. Max.
-25 ns
Min. Max.
Symbol Parameter
Test Conditions
Unit
I
CC
1
Vcc Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = 0
Com.
Ind.
—
—
50
—
—
—
50
60
—
—
50
60
—
—
50
60
mA
I
CC
2
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
—
—
100
—
—
—
90
100
—
—
80
90
—
—
70
80
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
CC
= Max.,
CE
≤
V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
—
—
10
—
—
—
10
20
—
—
10
20
—
—
10
20
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
—
—
2
—
—
—
2
5
—
—
2
5
—
—
2
5
mA
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
3.3V +10%, –5%
3.3V
±
5%
相關(guān)PDF資料
PDF描述
IS61LV256-20N 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-20T 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-25J 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-25N 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-25T 32K x 8 LOW VOLTAGE CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LV256-20JI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-20N 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-20NI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
IS61LV256-20T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-20TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
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