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參數(shù)資料
| 型號(hào)： | IS61C3216AL-12K |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-44 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 90K |
| 代理商： | IS61C3216AL-12K |
10
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
09/26/05
ISSI
IS61C3216AL
WRITE CYCLE NO. 2
(
OE
is HIGH During Write Cycle)
(1,2)
WRITE CYCLE NO. 3
(
OE
is LOW During Write Cycle)
(1)
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
≥
V
IH
.
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB
,
LB
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR2.eps
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB
,
LB
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR3.eps
相關(guān)PDF資料 |
PDF描述 |
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| IS61C3216AL-12KI | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12KLI | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12T | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12TI | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12TLI | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61C3216AL-12KI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61C3216AL-12KLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512K 32Kx16 12ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C3216AL-12KLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512K 32Kx16 12ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C3216AL-12T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12TI | 制造商:Integrated Silicon Solution Inc 功能描述: |
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