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參數(shù)資料
| 型號： | IS61C256AH-20N |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 20 ns, PDIP28 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-28 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 60K |
| 代理商： | IS61C256AH-20N |
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
3
IS61C256AH
ISSI
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10
Min. Max.
-12
Min. Max.
-15
Min. Max.
-20
Min. Max.
-25
Min. Max.
Symbol
Parameter
Test Conditions
Unit
I
CC
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
—
—
165
—
—
—
155
165
—
—
145
155
—
—
135
145
—
—
125
135
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
Com.
Ind.
—
—
25
—
—
—
25
30
—
—
25
30
—
—
25
30
—
—
25
30
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
CC
= Max.,
CE
≥
V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
—
—
2
—
—
—
2
—
—
2
—
—
2
—
—
2
mA
10
10
10
10
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
OPERATING RANGE
Range
Commercial
Ambient Temperature
0
°
C to +70
°
C
Speed
-10, -12
-15, -20, -25
-12
-15, -20, -25
V
CC
5V
±
5%
5V
±
10%
5V
±
5%
5V
±
10%
Industrial
–40
°
C to +85
°
C
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
(1)
–0.5
0.8
V
μ
A
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
Com.
Ind.
–5
–10
5
10
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
CC
,
Outputs Disabled
Com.
Ind.
–5
–10
5
μ
A
10
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
OUT
Output Capacitance
V
OUT
= 0V
10
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 5.0V.
相關PDF資料 |
PDF描述 |
|---|---|
| IS61C256AH-20NI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-20T | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-20TI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-25J | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-25JI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS61C256AH-20NI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-20T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-20TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-20TR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| IS61C256AH-25J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 HIGH-SPEED CMOS STATIC RAM |
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