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參數(shù)資料
| 型號(hào)： | IS61C256AH-12T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 12 ns, PDSO28 |
| 封裝： | TSOP1-28 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 60K |
| 代理商： | IS61C256AH-12T |
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
5
IS61C256AH
ISSI
DATA VALID
READ1.eps
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACE
t
LZCE
t
HZOE
HIGH-Z
DATA VALID
CE_RD2.eps
ADDRESS
OE
CE
D
OUT
t
HZCE
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE
,
CE
= V
IL
.
3. Address is valid prior to or coincident with
CE
LOW transitions.
READ CYCLE NO. 2
(1,3)
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61C256AH-12TI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-15J | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-15JI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-15N | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AL-12TI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61C256AH-12TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-12TL | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 12ns 28-Pin TSOP-I |
| IS61C256AH-12TLI | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 12ns 28-Pin TSOP-I |
| IS61C256AH-12T-TR | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 12ns 28-Pin TSOP-I T/R |
| IS61C256AH-15J | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K 32Kx8 15ns 5v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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