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參數(shù)資料
| 型號(hào)： | IS61C256AH-10N |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 10 ns, PDIP28 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-28 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 60K |
| 代理商： | IS61C256AH-10N |
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
IS61C256AH
ISSI
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PIN CONFIGURATION
28-Pin DIP and SOJ
PIN CONFIGURATION
28-Pin TSOP
PIN DESCRIPTIONS
A0-A14
Address Inputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Bidirectional Ports
Vcc
Power
GND
Ground
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–55 to +125
–65 to +150
1.5
20
Unit
V
°
C
°
C
W
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
TRUTH TABLE
Mode
WE
CE
OE
I/O Operation
Vcc Current
Not Selected
(Power-down)
Output Disabled H
Read
Write
X
H
X
High-Z
I
SB
1
, I
SB
2
L
L
L
H
L
X
High-Z
D
OUT
D
IN
I
CC
I
CC
I
CC
H
L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61C256AH-10T | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-12J | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-12JI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-12N | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-12NI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61C256AH-10T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH12J | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61C256AH-12J | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K 32Kx8 12ns 5v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C256AH-12JI | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 12ns 28-Pin SOJ |
| IS61C256AH-12JI-TR | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 12ns 28-Pin SOJ T/R |
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