參數(shù)資料
型號(hào): IS61C12816-20T
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 16 HIGH-SPEED CMOS STATIC RAM
中文描述: 128K X 16 STANDARD SRAM, 20 ns, PDSO44
封裝: PLASTIC, TSOP2-44
文件頁數(shù): 7/8頁
文件大?。?/td> 102K
代理商: IS61C12816-20T
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
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IS61C12816
ISSI
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least
one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
)
[
(
LB
) = (
UB
)
]
(
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
UNDEFINED
UNDEFINED
t
WC
t
SCE
t
PWB
t
AW
t
HA
HIGH-Z
HIGH-Z
t
PWE
t
HD
t
SA
t
HZWE
ADDRESS
CE
LB, UB
WE
WRITE
(1)
D
OUT
D
IN
t
LZWE
t
SD
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61C12816-20TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C180 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
IS61C256 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:WRITE CYCLE SWITCHING CHARACTERISTICS
IS61C25616 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY
IS61C25616AL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH-SPEED CMOS STATIC RAM