參數(shù)資料
型號: IS61C12816-20KI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 16 HIGH-SPEED CMOS STATIC RAM
中文描述: 128K X 16 STANDARD SRAM, 20 ns, PDSO44
封裝: 0.400 INCH, PLASTIC, SOJ-44
文件頁數(shù): 4/8頁
文件大?。?/td> 102K
代理商: IS61C12816-20KI
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
IS61C12816
ISSI
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-12
-15
-20
Symbol
Parameter
Min. Max.
Min.
Max.
Min. Max.
Unit
t
RC
Read Cycle Time
12
15
20
ns
t
AA
Address Access Time
12
15
20
ns
t
OHA
Output Hold Time
3
3
4
ns
t
ACE
CE
Access Time
12
15
20
ns
t
DOE
OE
Access Time
OE
to High-Z Output
6
7
9
ns
t
HZOE
(2)
6
0
6
0
8
ns
t
LZOE
(2)
OE
to Low-Z Output
CE
to High-Z Output
0
0
0
ns
t
HZCE
(2
0
6
0
6
0
8
ns
t
LZCE
(2)
CE
to Low-Z Output
LB
,
UB
Access Time
LB
,
UB
to High-Z Output
3
3
3
ns
t
BA
6
7
9
ns
t
HZB
0
6
0
6
0
8
ns
t
LZB
LB
,
UB
to Low-Z Output
0
0
0
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0 to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100%
tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Figure 1
Figure 2
AC TEST LOADS
480
30 pF
Including
jig and
scope
255
OUTPUT
5V
480
5 pF
Including
jig and
scope
255
OUTPUT
5V
相關(guān)PDF資料
PDF描述
IS61C12816-20T 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-20TI 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C25616 256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY
IS61C256AH 32K x 8 High-Speed CMOS Static RAM(32K x 8 高速CMOS靜態(tài)RAM)
IS61C256AH-15NI 32K x 8 HIGH-SPEED CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61C12816-20T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-20TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C180 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
IS61C256 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:WRITE CYCLE SWITCHING CHARACTERISTICS
IS61C25616 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY