參數(shù)資料
型號(hào): IS61C12816-12K
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 16 HIGH-SPEED CMOS STATIC RAM
中文描述: 128K X 16 STANDARD SRAM, 12 ns, PDSO44
封裝: 0.400 INCH, PLASTIC, SOJ-44
文件頁(yè)數(shù): 7/8頁(yè)
文件大?。?/td> 102K
代理商: IS61C12816-12K
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
7
1
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3
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6
7
8
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12
IS61C12816
ISSI
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least
one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
)
[
(
LB
) = (
UB
)
]
(
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
UNDEFINED
UNDEFINED
t
WC
t
SCE
t
PWB
t
AW
t
HA
HIGH-Z
HIGH-Z
t
PWE
t
HD
t
SA
t
HZWE
ADDRESS
CE
LB, UB
WE
WRITE
(1)
D
OUT
D
IN
t
LZWE
t
SD
相關(guān)PDF資料
PDF描述
IS61C12816-12KI 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-12T 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-12TI 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-15K 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-15KI 128K x 16 HIGH-SPEED CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61C12816-12KI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-12T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-12TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-15K 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-15KI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM