參數(shù)資料
型號(hào)： IS61C1024L-25T
廠商： INTEGRATED SILICON SOLUTION INC
元件分類(lèi)： DRAM
英文描述： 128K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述： 128K X 8 STANDARD SRAM, 25 ns, PDSO32
封裝： 8 X 20 MM, TSOP1-32
文件頁(yè)數(shù)： 3/11頁(yè)
文件大小： 80K
代理商： IS61C1024L-25T
IS61C1024
IS61C1024L
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR028-1K
05/12/99
3
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–55 to +125
–65 to +150
1.5
20
Unit
V
°
C
°
C
W
mA
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
5
pF
C
OUT
Output Capacitance
V
OUT
= 0V
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
μ
A
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
Com.
Ind.
–2
–5
2
5
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
CC
Outputs Disabled
Com.
Ind.
–2
–5
2
5
μ
A
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
相關(guān)PDF資料
PDF描述
IS61C1024L-25TI 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024-15N IC-1MB FAST SRAM
IS61C1024-20JI 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024L-15KI 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C12816 128K x 16 HIGH-SPEED CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61C1024L-25TI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C12816 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-12K 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-12KI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C12816-12T 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM
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