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參數(shù)資料
| 型號： | IS606 |
| 廠商： | ISOCOM COMPONENTS LTD |
| 元件分類： | 光電耦合器 |
| 英文描述： | Photo Coupled Isolator GaAs Infrared Emitting Diode & Light Activated SCR(正向峰值電壓625V的光耦合/隔離器（由GaAs紅外發(fā)光二極管+光活性硅控整流器組成）) |
| 中文描述： | 1 CHANNEL SCR OUTPUT OPTOCOUPLER |
| 封裝： | PLASTIC, DIP-6 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 66K |
| 代理商： | IS606 |
0 1 2 3 4
On state voltage V
T
( V )
Maximum Transient Thermal Impedence
0 0.2 0.4 0.6 0.8 1.0
On state current (
Α
)
O
T
On State Characteristics
N
D
)
25 50 75 100
Ambient temperature T
A
( °C )
C
s
6/12/00
dV/dt vs. Ambient temperature
Holding Current vs. Ambient
Temperature
H
H
μ
A
10
Normalized to
V
AK
= 50V
R
GK
=10k
T
A
= 25 °C
R
GK
=300
10k
27k
56k
1k
0.001 0.01 0.1 1 2 4 10 100
Time (seconds)
T
Off State Forward Current vs.
Ambient Temperature
Ambient temperature T
A
( °C )
0 25 50 75 100
Normalized to
V
AK
= 50V
T
A
= 25 °C
On State Current vs. Maximum
Allowable Temperature
M
10
100
90
0
1
2
4
10
20
40
100
200
400
2000
1000
4000
10000
-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature T
A
( °C )
1. Lead temperature measured at the
widest portion of the SCR anode lead.
2. Ambient temperature measured at
a point 1/2" from the device
.
Junction to ambient
Jio
1
2
4
10
20
40
100
200
400
1000
V
AK
= 625V
V
AK
= 50V
20
40
100
200
400
1000
4000
2000
10000
1. Ambient temp. half-sine wave avg
2. Ambient temp. DC current
3. Anode lead temp. half-sine wave avg
4. Anode lead temp. DC current
1.
2.
4.
3.
20
30
40
50
60
70
80
R
GK
=300
10k
27k
56k
1k
0.1
1
10
40
100
4
0.4
400
1000
J
J
Increases to forward
breakover voltage
0.01
0.02
0.04
0.1
0.2
0.4
1
2
DB92481m-AAS/A1
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