參數(shù)資料
型號(hào)： IS45S81600B-7TLA
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
中文描述： 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： LEAD FREE, PLASTIC, TSOP2-54
文件頁(yè)數(shù)： 28/59頁(yè)
文件大?。?/td> 593K
代理商： IS45S81600B-7TLA
ISSI
28
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/14/06
IS45S81600B, IS45S16800B
possible CAS latency; data element n + 3 is either the last of
a burst of four or the last desired of a longer burst. Following
the PRECHARGE command, a subsequent command to the
same bank cannot be issued until t
RP
is met. Note that part
of the row precharge time is hidden during the access of the
last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the opti-
mum time (as described above) provides the same opera-
tion that would result from the same fixed-length burst with
auto precharge. The disadvantage of the PRECHARGE
command is that it requires that the command and address
buses be available at the appropriate time to issue the
command; the advantage of the PRECHARGE command is
that it can be used to truncate fixed-length or full-page
bursts.
Full-page READ bursts can be truncated with the BURST
TERMINATE command, and fixed-length READ bursts
may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The BURST
TERMINATE command should be issued x cycles before
the clock edge at which the last desired data element is
valid, where x equals the CAS latency minus one. This is
shown in the READ Burst Termination diagram for each
possible CAS latency; data element n + 3 is the last desired
data element of a longer burst.
相關(guān)PDF資料
PDF描述
IS45S81600B-7TLA1 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S32200C1 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S32200C1-7BLA1 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S32200C1-7TA1 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S32200C1-7TLA 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS45S81600B-7TLA1 制造商:Integrated Silicon Solution Inc 功能描述:
IS45S81600E 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
IS45S81600E-6TLA1 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
IS45S81600E-7CTNA1 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
IS45S81600E-7CTNA2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
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