- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377553 > IS45S81600B-7TLA1 (INTEGRATED SILICON SOLUTION INC) 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM PDF資料下載
參數(shù)資料
| 型號： | IS45S81600B-7TLA1 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 9/59頁 |
| 文件大?。?/td> | 593K |
| 代理商： | IS45S81600B-7TLA1 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁當前第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/14/06
9
ISSI
IS45S81600B, IS45S16800B
Current State
Idle
CS
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
RAS
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
CAS
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
WE
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
Address
X
X
X
BA, CA, A10
A, CA, A10
BA, RA
BA, A10
X
OC, BA1=L
X
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
Command
DESL
NOP
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
Action
Nop or Power Down
(2)
Nop or Power Down
(2)
Nop or Power Down
ILLEGAL
(3)
ILLEGAL
(3)
Row activating
Nop
Auto refresh or Self-refresh
(4)
Mode register set
Nop
Nop
Nop
Begin read
(5)
Begin write
(5)
ILLEGAL
(3)
Precharge
Precharge all banks
(6)
ILLEGAL
ILLEGAL
Continue burst to end to
Row active
Continue burst to end Row
Row active
Burst stop, Row active
Terminate burst,
begin new read
(7)
Terminate burst,
begin write
(7,8)
ILLEGAL
(3)
Terminate burst
Precharging
ILLEGAL
ILLEGAL
Continue burst to end
Write recovering
Continue burst to end
Write recovering
Burst stop, Row active
Terminate burst, start read :
Determine AP
(7,8)
Terminate burst, new write :
Determine AP
(7)
ILLEGAL
(3)
Terminate burst Precharging
(9)
ILLEGAL
ILLEGAL
Row Active
L
L
H
L
L
X
L
L
X
H
L
X
X
OC, BA
X
REF/SELF
MRS
DESL
Read
L
H
H
H
X
NOP
L
L
H
H
H
L
L
H
X
BA, CA, A10
BST
READ/READA
L
H
L
L
BA, CA, A10
WRIT/WRITA
L
L
L
L
H
H
H
L
BA, RA
BA, A10
ACT
PRE/PALL
L
L
H
L
L
X
L
L
X
H
L
X
X
OC, BA
X
REF/SELF
MRS
DESL
Write
L
H
H
H
X
NOP
L
L
H
H
H
L
L
H
X
BA, CA, A10
BST
READ/READA
L
H
L
L
BA, CA, A10
WRIT/WRITA
L
L
L
L
L
L
L
L
H
H
L
L
H
L
H
L
BA, RA
BA, A10
X
OC, BA
RA ACT
PRE/PALL
REF/SELF
MRS
FUNCTIONAL TRUTH TABLE
Note: H=V
IH
, L=V
IL
x= V
IH
or V
IL
, V = Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code
相關PDF資料 |
PDF描述 |
|---|---|
| IS45S32200C1 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200C1-7BLA1 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200C1-7TA1 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200C1-7TLA | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200C1-7TLA1 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS45S81600E | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM |
| IS45S81600E-6TLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM |
| IS45S81600E-7CTNA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM |
| IS45S81600E-7CTNA2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM |
| IS45S81600E-7TLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。