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參數(shù)資料
| 型號： | IS43R16320A |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 32Meg x 16 512-MBIT DDR SDRAM |
| 中文描述： | 32Meg × 16 512兆位DDR SDRAM內存 |
| 文件頁數(shù)： | 16/18頁 |
| 文件大?。?/td> | 219K |
| 代理商： | IS43R16320A |
16
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev.
A
0
3/22/06
ISSI
IS43R16320A
14. An input setup and hold time derating table is used to increase t
IS
and t
IH
in the case where the input slew
rate is below 0.5 V/ns.
15. An input setup and hold time derating table is used to increase t
DS
and t
DH
in the case where the I/O slew rate
is below 0.5 V/ns.
16. An I/O Delta Rise, Fall Derating table is used to increase t
DS
and t
DH
in the case where DQ, DM, and DQS
slew rates differ.
Input Slew Rate
delta (t
IS
)
delta (t
IH
)
Unit
Notes
0.5 V/ns
0
0
ps
1,2
0.4 V/ns
+50
0
ps
1,2
0.3 V/ns
+100
0
ps
1,2
1. Input slew rate is based on the lesser of the slew rates determined by either V
IH (AC)
to V
IL (AC)
or V
IH (DC)
to V
IL (DC)
, similarly for rising
transitions.
2. These derating parameters may be guaranteed by design or tester characterization and are not necessarily tested on each device.
Input Slew Rate
delta (t
DS
)
delta (t
DH
)
Unit
Notes
0.5 V/ns
0
0
ps
1,2
0.4 V/ns
+75
+75
ps
1,2
0.3 V/ns
+150
+150
ps
1,2
1. I/O slew rate is based on the lesser of the slew rates determined by either V
IH (AC)
to V
IL (AC)
or V
IH (DC)
to V
IL (DC)
, similarly for rising
transitions.
2. These derating parameters may be guaranteed by design or tester characterization and are not necessarily tested on each device.
Input Slew Rate
delta (t
DS
)
delta (t
DH
)
Unit
Notes
0.0 V/ns
0
0
ps
1,2,3,4
0.25 V/ns
+50
+50
ps
1,2,3,4
0.5 V/ns
+100
+100
ps
1,2,3,4
1. Input slew rate is based on the lesser of the slew rates determined by either V
IH (AC)
to V
IL (AC)
or V
IH (DC)
to V
IL (DC)
, similarly for rising
transitions.
2. Input slew rate is based on the larger of AC to AC delta rise, fall rate and DC to DC delta rise, fall rate.
3. The delta rise, fall rate is calculated as: [1/(slew rate 1)] - [1/(slew rate 2)]
For example: slew rate 1 = 0.5 V/ns; slew rate 2 = 0.4 V/ns
Delta rise, fall = (1/0.5) - (1/0.4) [ns/V]
= -0.5 ns/V
Using the table above, this would result in an increase in t
DS
and t
DH
of 100 ps.
4. These derating parameters may be guaranteed by design or tester characterization and are not necessarily tested on each device.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS43R16320A-6TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Meg x 16 512-MBIT DDR SDRAM |
| IS43R16320B-5TL | 功能描述:動態(tài)隨機存取存儲器 512M (32Mx16) 200MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16320B-5TL-TR | 功能描述:動態(tài)隨機存取存儲器 512M (32Mx16) 200MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16320D-5BL | 功能描述:動態(tài)隨機存取存儲器 512M (32Mx16) 200MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16320D-5BLI | 功能描述:動態(tài)隨機存取存儲器 512M (32Mx16) 200MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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