參數(shù)資料
型號(hào)： IS42VS16400C1-12TL
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 4M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO54
封裝： 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
文件頁(yè)數(shù)： 13/56頁(yè)
文件大?。?/td> 509K
代理商： IS42VS16400C1-12TL
IS42VS16400C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
10/06/05
13
DC ELECTRICAL CHARACTERISTICS
(4)
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
I
CC1
Operating Current
(1,2)
Test Condition
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
CKE
≤
V
IL
(
MAX
)
Min.
—
Max.
35
Unit
mA
CAS
Latency = 3
CAS
Latency = 2
—
40
I
CC2P
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Power-Down Mode)
Active Standby Current
(3)
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(3)
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Inputs are stable
Operating Current
(In Burst Mode)
(1,3)
t
CK
= 10 ns
—
0.3
mA
I
CC2PS
CKE
≤
V
IL
(
MAX
)
CLK
≤
V
IL
(
MAX
)
CKE
≥
V
IH
(
MIN
)
CS
≥
V
IH
(
MIN
),
CKE
≥
V
IH
(
MIN
)
Inputs are stable
CKE
≤
V
IL
(
MAX
)
t
CK
=
∞
—
0.3
mA
I
CC2N
t
CK
= 10 ns
—
7
mA
I
CC2NS
t
CK
=
∞
—
2
mA
I
CC3P
t
CK
= 10 ns
—
6
mA
I
CC3PS
CKE
≤
V
IL
(
MAX
)
CLK
≤
V
IL
(
MAX
)
CKE
≥
V
IH
(
MIN
)
CS
≥
V
IH
(
MIN
)
CKE
≥
V
IH
(
MIN
)
CLK
≤
V
IL
(
MAX
)
t
CK
=
∞
—
5
mA
I
CC3N
t
CK
= 10 ns
—
12
mA
I
CC3NS
t
CK
=
∞
—
10
mA
I
CC4
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
Page Burst
All Banks activated
t
RC
= t
RC
(
MIN
)
CKE
≤
0.2V
CAS
latency = 2, 3
—
50
mA
I
CC5
I
CC6
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between V
DD
and Vss for each memory
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc
1
and Icc
4
depend on the output load. The maximum values for Icc
1
and Icc
4
are obtained with the output open state.
3. Inputs changed once every two clocks.
4. Not all parameters are tested at the wafer level, but the parameters have been characterized previously.
Auto-Refresh Current
Self-Refresh Current
CAS
latency = 2, 3
—
—
40
170
mA
μA
相關(guān)PDF資料
PDF描述
IS42VS16400C1-12TLI 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS43R16160A-5T 16Meg x 16 256-MBIT DDR SDRAM
IS43R16160A-5TL 16Meg x 16 256-MBIT DDR SDRAM
IS43R16160A-6T 16Meg x 16 256-MBIT DDR SDRAM
IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42VS16400C1-12TLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400E-10TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 64M (4Mx16) 100MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16400E-10TLI 制造商:Integrated Silicon Solution Inc 功能描述:
IS42VS16400E-10TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 64M (4Mx16) 100MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16400E-75BLI 制造商:Integrated Silicon Solution Inc 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*