參數(shù)資料
型號(hào)： IS42VS16400C1-10TLI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 4M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
封裝： 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
文件頁(yè)數(shù)： 22/56頁(yè)
文件大小： 509K
代理商： IS42VS16400C1-10TLI
IS42VS16400C1
ISSI
22
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
10/06/05
DON'T CARE
UNDEFINED
CLK
COMMAND
DQ
READ
NOP
NOP
NOP
CAS Latency - 3
t
AC
t
OH
D
OUT
T0
T1
T2
T3
T4
t
LZ
CLK
COMMAND
DQ
READ
NOP
NOP
CAS Latency - 2
t
AC
t
OH
D
OUT
T0
T1
T2
T3
t
LZ
CAS Latency
possible CAS latency; data element n + 3 is either the last of
a burst of four or the last desired of a longer burst. Following
the PRECHARGE command, a subsequent command to the
same bank cannot be issued until t
RP
is met. Note that part
of the row precharge time is hidden during the access of the
last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the
optimum time (as described above) provides the same
operation that would result from the same fixed-length
burst with auto precharge. The disadvantage of the
PRECHARGE command is that it requires that the com-
mand and address buses be available at the appropriate
time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate
fixed-length or full-page bursts.
Full-page READ bursts can be truncated with the BURST
TERMINATE command, and fixed-length READ bursts
may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The
BURST TERMINATE command should be issued x cycles
before the clock edge at which the last desired data
element is valid, where x equals the CAS latency minus
one. This is shown in the READ Burst Termination
diagram for each possible CAS latency; data element n +
3 is the last desired data element of a longer burst.
相關(guān)PDF資料
PDF描述
IS42VS16400C1-12T 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12TI 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12TL 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12TLI 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS43R16160A-5T 16Meg x 16 256-MBIT DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42VS16400C1-12T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12TLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400E-10TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 64M (4Mx16) 100MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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