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參數(shù)資料
| 型號： | IS42VS16400C1-10TL |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 11/56頁 |
| 文件大?。?/td> | 509K |
| 代理商： | IS42VS16400C1-10TL |
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IS42VS16400C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
10/06/05
11
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
DD
MAX
Maximum Supply Voltage
–0.5 to +2.6
V
V
DD
Q
MAX
Maximum Supply Voltage for Output Buffer
–0.5 to +2.6
V
V
IN
Input Voltage
–0.5 to +2.6
V
P
D
MAX
Allowable Power Dissipation
1
W
I
CS
Output Shorted Current
50
mA
T
OPR
Operating Temperature
Com
Ind.
0 to +70
-40 to +85
°C
°C
T
STG
Storage Temperature
–55 to +150
°C
DC RECOMMENDED OPERATING CONDITIONS
(2)
Commercial
(
T
A
= 0°C to +70°C), Industrial
(
T
A
= -40°C to +85°C)
Symbol
V
DD
, V
DD
Q
V
IH
V
IL
Parameter
Supply Voltage
Input High Voltage
(3)
Input Low Voltage
(4)
Min.
1.7
Typ.
1.8
—
—
Max.
1.9
Unit
V
V
V
0.8 x V
DDQ
-0.3
V
DDQ
+ 0.3
+0.3
CAPACITANCE CHARACTERISTICS
(1,2)
(V
DD
= 1.8V, T
A
= +25°C, f = 1 MHz)
Symbol
C
IN
1
C
IN
2
CI/O
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. All voltages are referenced to Vss.
3. V
IH
(max) = 2.2V with a pulse width
≤
3 ns.
4. V
IL
(min) = -1.0V with a pulse width
≤
3 ns.
Parameter
Input Capacitance: CLK
Input Capacitance: (A0-A11, CKE,
CS
,
RAS
,
CAS
,
WE
, LDQM, UDQM) 2.5
Data Input/Output Capacitance: DQ0-DQ15
Min.
2.5
Max.
4.0
5.0
6.5
Unit
pF
pF
pF
4.0
相關PDF資料 |
PDF描述 |
|---|---|
| IS42VS16400C1-10TLI | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12T | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12TI | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12TL | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12TLI | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS42VS16400C1-10TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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