參數(shù)資料
型號(hào)： IS42S32400B-6TLI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述： 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
封裝： LEAD FREE, TSOP2-86
文件頁(yè)數(shù)： 28/60頁(yè)
文件大?。?/td> 644K
代理商： IS42S32400B-6TLI
ISSI
28
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00G
06/15/06
IS42S32400B
possible CAS latency; data element
n
+ 3 is either the last of
a burst of four or the last desired of a longer burst. Following
the PRECHARGE command, a subsequent command to the
same bank cannot be issued until t
RP
is met. Note that part
of the row precharge time is hidden during the access of the
last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the opti-
mum time (as described above) provides the same opera-
tion that would result from the same fixed-length burst with
auto precharge. The disadvantage of the PRECHARGE
command is that it requires that the command and address
buses be available at the appropriate time to issue the
command; the advantage of the PRECHARGE command is
that it can be used to truncate fixed-length or full-page
bursts.
Full-page READ bursts can be truncated with the BURST
TERMINATE command, and fixed-length READ bursts
may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The BURST
TERMINATE command should be issued
x
cycles before
the clock edge at which the last desired data element is
valid, where
x
equals the CAS latency minus one. This is
shown in the READ Burst Termination diagram for each
possible CAS latency; data element
n
+ 3 is the last desired
data element of a longer burst.
相關(guān)PDF資料
PDF描述
IS42S32400B-7B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7BI 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7BL 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7BLI 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7T 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32400B-6TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (4Mx32) 166MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32400B-6T-TR 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 166MHZ 86TSOP
IS42S32400B-7B 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 143MHZ 90FBGA
IS42S32400B-7BI 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 143MHZ 90FBGA
IS42S32400B-7BI-TR 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 143MHZ 90FBGA
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