參數(shù)資料
型號(hào): IS42S32400B-6TI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述: 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
封裝: TSOP2-86
文件頁數(shù): 12/60頁
文件大小: 644K
代理商: IS42S32400B-6TI
ISSI
12
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00G
06/15/06
IS42S32400B
CKE RELATED COMMAND TRUTH TABLE
(1)
CKE
n-1
H
L
L
L
L
L
H
H
H
H
H
H
H
H
L
L
H
L
L
H
H
H
H
H
H
H
H
H
H
L
H
H
L
L
Current State
Self-Refresh (S.R.)
Operation
INVALID, CLK (n - 1) would exit S.R.
Self-Refresh Recovery
(2)
Self-Refresh Recovery
(2)
Illegal
Illegal
Maintain S.R.
Idle After t
RC
Idle After t
RC
Illegal
Illegal
Begin clock suspend next cycle
(5)
Begin clock suspend next cycle
(5)
Illegal
Illegal
Exit clock suspend next cycle
(2)
Maintain clock suspend
INVALID, CLK (n - 1) would exit P.D.
EXIT P.D. --> Idle
(2)
Maintain power down mode
Refer to operations n Operative Command Table
Refer to operations n Operative Command Table
Refer to operations n Operative Command Table
Auto-Refresh
Refer to operations n Operative Command Table
Refer to operations n Operative Command Table
Refer to operations n Operative Command Table
Refer to operations n Operative Command Table
Self-Refresh
(3)
Refer to operations n Operative Command Table
Power-Down
(3)
Refer to operations n Operative Command Table
Begin clock suspend next cycle
(4)
Exit clock suspend next cycle
Maintain clock suspend
n
X
H
H
H
H
L
H
H
H
H
L
L
L
L
H
L
X
H
L
H
H
H
H
H
L
L
L
L
L
X
H
L
H
L
CS
X
H
L
L
L
X
H
L
L
L
H
L
L
L
X
X
X
X
X
H
L
L
L
L
H
L
L
L
L
X
X
X
X
X
RAS
X
X
H
H
L
X
X
H
H
L
X
H
H
L
X
X
X
X
X
X
H
L
L
L
X
H
L
L
L
X
X
X
X
X
CAS
X
X
H
L
X
X
X
H
L
X
X
H
L
X
X
X
X
X
X
X
X
H
L
L
X
X
H
L
L
X
X
X
X
X
WE
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
L
X
X
X
H
L
X
X
X
X
X
Address
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Op - Code
X
Op - Code
X
X
X
X
X
Self-Refresh Recovery
Power-Down (P.D.)
Both Banks Idle
Any state
other than
listed above
Notes:
1. H : High level, L : low level, X : High or low level (Don’t care).
2. CKE Low to High transition will re-enable CLK and other inputs asynchronously. A minimum
setup time must be satisfied
before any command other than EXIT.
3. Power down and Self refresh can be entered only from the both banks idle state.
4. Must be legal command as defined in Operative Command Table.
5. Illegal if t
XSR
is not satisfied.
相關(guān)PDF資料
PDF描述
IS42S32400B-6TL 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-6TLI 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7BI 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7BL 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32400B-6TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (4Mx32) 166MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32400B-6TLI 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 86-Pin TSOP-II
IS42S32400B-6TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (4Mx32) 166MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32400B-6T-TR 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 166MHZ 86TSOP
IS42S32400B-7B 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 143MHZ 90FBGA