- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377551 > IS42S32200B (Integrated Silicon Solution, Inc.) 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM PDF資料下載
參數(shù)資料
| 型號： | IS42S32200B |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 為512k位× 32位× 4銀行（64兆位）同步動(dòng)態(tài)RAM |
| 文件頁數(shù)： | 32/56頁 |
| 文件大?。?/td> | 537K |
| 代理商： | IS42S32200B |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁當(dāng)前第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁
IS42S32200B
ISSI
32
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00C
09/29/03
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
0V
≤
V
IN
≤
V
DD
, with pins other than
the tested pin at 0V
Output is disabled
0V
≤
V
OUT
≤
V
DD
I
OUT
= –2 mA
I
OUT
= +2 mA
Speed Min.
Max.
Unit
I
IL
Input Leakage Current
–5
5
μA
I
OL
Output Leakage Current
–5
5
μA
V
OH
V
OL
Output High Voltage Level
Output Low Voltage Level
2.4
—
—
0.4
V
V
I
CC1
Operating Current
(1,2)
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
CKE
≤
V
IL
(
MAX
)
CAS
latency = 3
-6
-7
—
—
150
130
mA
mA
I
CC2P
I
CC2PS
I
CC2N
I
CC2NS
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
—
—
—
—
—
—
—
—
—
—
—
—
-6
-7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
2
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
CKE
≥
V
IH
(
MIN
)
45
30
35
7
8
6
7
70
60
65
185
180
Com.
Ind.
I
CC3P
Active Standby Current
CKE
≤
V
IL
(
MAX
)
t
CK
= t
CK
(
MIN
) Com.
Ind.
Com.
Ind.
I
CC3PS
(In Power-Down Mode)
t
CK
=
∞
I
CC3N
I
CC3NS
Active Standby Current
(In Non Power-Down Mode)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
Com.
Ind.
I
CC4
Operating Current
(In Burst Mode)
(1)
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
CAS
latency = 3
CAS
latency = 2
-6
-7
—
—
180
180
mA
mA
I
CC5
Auto-Refresh Current
t
RC
= t
RC
(
MIN
)
CAS
latency = 3
-6
-7
—
—
185
160
mA
mA
CAS
latency = 2
-6
-7
—
—
185
180
mA
mA
I
CC6
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between Vdd and GND for each memory
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc
1
and Icc
4
depend on the output load. The maximum values for Icc
1
and Icc
4
are obtained with the output open state.
Self-Refresh Current
CKE
≤
0.2V
—
—
1.5
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S32200B-6T | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B-6TI | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B-6TL | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B-6TLI | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B-7T | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S32200B-6T | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II |
| IS42S32200B-6TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B-6TL | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II |
| IS42S32200B-6TLI | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II |
| IS42S32200B-6TL-TR | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。