參數(shù)資料
型號： IS42S16400D-7BL
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
封裝： 10.10 X 6.40 MM, 0.65 MM PITCH, LEAD FREE, MINI, FBGA-60
文件頁數(shù)： 32/57頁
文件大?。?/td> 578K
代理商： IS42S16400D-7BL
IS42S16400D
ISSI
32
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
07/05/06
CLK
CKE
HIGH - Z
ALL BANKS
BANK SELECT
BANK ADDRESS
CS
RAS
CAS
WE
A0-A9, A11
A10
BA0, BA1
DON'T CARE
CLK
CKE
COMMAND
NOP
NOP
ACTIVE
≥
t
CKS
t
CKS
All banks idle
Enter
power-down mode
Exit power-down mode
t
RCD
t
RAS
t
RC
Input buffers gated
off
PRECHARGE Command
POWER-DOWN
POWER-DOWN
Power-down occurs if CKE is registered LOW coincident
with a NOP or COMMAND INHIBIT when no accesses are
in progress. If power-down occurs when all banks are idle,
this mode is referred to as precharge power-down; if
power-down occurs when there is a row active in either
bank, this mode is referred to as active power-down.
Entering power-down deactivates the input and output
buffers, excluding CKE, for maximum power savings
while in standby. The device may not remain in the power-
down state longer than the refresh period (64ms) since no
refresh operations are performed in this mode.
The power-down state is exited by registering a NOP or
COMMAND INHIBIT and CKE HIGH at the desired clock
edge (meeting t
CKS
). See figure below.
PRECHARGE
The PRECHARGE command (see figure) is used to
deactivate the open row in a particular bank or the open
row in all banks. The bank(s) will be available for a
subsequent row access some specified time (t
RP
) after
the PRECHARGE command is issued. Input A10 deter-
mines whether one or all banks are to be precharged, and
in the case where only one bank is to be precharged,
inputs BA0, BA1 select the bank. When all banks are to be
precharged, inputs BA0, BA1 are treated as “Don’t Care.”
Once a bank has been precharged, it is in the idle state and
must be activated prior to any READ or WRITE com-
mands being issued to that bank.
相關(guān)PDF資料
PDF描述
IS42S16400D-7BLI 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400D-7T 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400D-7TI 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400D-7TL 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400D-7TLI 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S16400D-7BLI 功能描述:動態(tài)隨機(jī)存取存儲器 64M 4Mx16 143Mhz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S16400D-7BLI-TR 功能描述:動態(tài)隨機(jī)存取存儲器 64M 4Mx16 143Mhz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S16400D-7BL-TR 功能描述:動態(tài)隨機(jī)存取存儲器 64M 4Mx16 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S16400D-7T 功能描述:動態(tài)隨機(jī)存取存儲器 64M 4Mx16 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S16400D-7TI 功能描述:動態(tài)隨機(jī)存取存儲器 64M 4Mx16 143Mhz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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