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參數(shù)資料
| 型號： | IS42S16400 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1Meg位×16位×4堆棧（64兆位）同步動態(tài)RAM |
| 文件頁數(shù)： | 11/54頁 |
| 文件大?。?/td> | 580K |
| 代理商： | IS42S16400 |
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IS42S16400
ISSI
Integrated Silicon Solution, Inc.
—
1-800-379-4774
TARGET SPECIFICATION
Rev. C
05/04/01
11
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
CC
MAX
V
CCQ
V
IN
V
OUT
P
D
MAX
I
CS
T
OPR
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
–
1.0 to +4.6
–
1.0 to +4.6
–
1.0 to +4.6
–
1.0 to +4.6
1
50
0 to +70
–
40 to +85
–
55 to +150
V
V
V
V
W
mA
°
C
MAX
Com.
Ind.
T
STG
Storage Temperature
°
C
DC RECOMMENDED OPERATING CONDITIONS
(2)
(
At T
A
= 0 to +70
°
C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
, V
CCQ
V
IH
V
IL
Supply Voltage
Input High Voltage
Input Low Voltage
3.0
2.0
-0.3
3.3
—
—
3.6
V
V
V
V
CC
+ 0.3
+0.8
CAPACITANCE CHARACTERISTICS
(1,2)
(At T
A
= 0 to +25
°
C, Vcc = Vcc
Q
= 3.3 ± 0.3V, f = 1 MHz)
Symbol
Parameter
Typ.
Max.
Unit
C
IN1
C
IN2
CI/O
Input Capacitance: A0-A11, BA0, BA1
Input Capacitance: (CLK, CKE,
CS
,
RAS
,
CAS
,
WE
, LDQM, UDQM)
Data Input/Output Capacitance: I/O0-I/O15
—
—
—
4
4
5
pF
pF
pF
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. All voltages are referenced to GND.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S16400-10T | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-10TI | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-6T | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-7T | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-7TI | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16400_08 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-10T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-10TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-6T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-7T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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