參數(shù)資料
型號： IS42S16400-7TI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝： 0.400 INCH, TSOP2-54
文件頁數(shù)： 12/54頁
文件大?。?/td> 580K
代理商： IS42S16400-7TI
IS42S16400
ISSI
12
Integrated Silicon Solution, Inc.
—
1-800-379-4774
TARGET SPECIFICATION
Rev. C
05/04/01
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol
I
IL
Parameter
Input Leakage Current
Test Condition
0V
≤
V
IN
≤
V
CC
, with pins other than
the tested pin at 0V
Output is disabled, 0V
≤
V
OUT
≤
V
CC
I
OUT
=
–
2 mA
I
OUT
= +2 mA
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
Speed
Min.
–
5
Max.
5
Unit
μA
I
OL
V
OH
V
OL
I
CC1
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Operating Current
(1,2)
–
5
2.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
—
0.4
140
125
145
110
125
3
4
2
3
30
10
15
3
7
3
5
40
20
25
130
100
120
80
100
130
100
120
80
100
150
130
150
110
130
130
100
120
80
100
1
μA
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
CAS
latency = 3
-6
-7
-7
-10
-10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-6
-7
-7
-10
-10
-6
-7
-7
-10
-10
-6
-7
-7
-10
-10
-6
-7
-7
-10
-10
—
Com.
Ind.
Com.
Ind.
Com.
Ind.
Com.
Ind.
I
CC2P
Precharge Standby Current
CKE
≤
V
IL
(
MAX
)
t
CK
= t
CK
(
MIN
)
I
CC2PS
(In Power-Down Mode)
t
CK
=
∞
I
CC2N
I
CC2NS
Precharge Standby Current
(In Non Power-Down Mode)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
Com.
Ind.
Com.
Ind.
Com.
Ind.
I
CC3P
Active Standby Current
CKE
≤
V
IL
(
MAX
)
t
CK
= t
CK
(
MIN
)
Ind.
t
CK
=
∞
I
CC3PS
(In Power-Down Mode)
I
CC3N
I
CC3NS
Active Standby Current
(In Non Power-Down Mode)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
Com.
Ind.
I
CC4
Operating Current
(In Burst Mode)
(1)
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
CAS
latency = 3
Com.
Ind.
Com.
Ind.
CAS
latency = 2
Com.
Ind.
Com.
Ind.
I
CC5
Auto-Refresh Current
t
RC
= t
RC
(
MIN
)
CAS
latency = 3
Com.
Ind.
Com.
Ind.
CAS
latency = 2
Com.
Ind.
Com.
Ind.
I
CC6
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between Vcc and GND for each memory chip
to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc
1
and Icc
4
depend on the output load. The maximum values for Icc
1
and Icc
4
are obtained with the output open state.
Self-Refresh Current
CKE
≤
0.2V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S16400A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400A-7T 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II 制造商:Integrated Silicon Solution Inc 功能描述:SDRAM, 4M x 16, 54 Pin, Plastic, TSOP
IS42S16400A-7TI 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II
IS42S16400A-7TI-TR 制造商:Integrated Silicon Solution Inc 功能描述:4Mx16 Synchronous DRAM, 3.3V 7ns 54 TSOP-II, industrial (T&R)
IS42S16400B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
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