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參數(shù)資料
| 型號： | IS42S16160B |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 32Meg × 8，16Meg x16 256兆位同步DRAM |
| 文件頁數(shù)： | 20/62頁 |
| 文件大?。?/td> | 646K |
| 代理商： | IS42S16160B |
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ISSI
20
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00E
05/25/06
IS42S83200B, IS42S16160B
FUNCTIONAL DESCRIPTION
The 256Mb SDRAMs are quad-bank DRAMs which operate
at 3.3V and include a synchronous interface (all signals are
registered on the positive edge of the clock signal, CLK).
Each of the 67,108,864-bit banks is organized as 8,192
rows by 512 columns by 16 bits or 8,192 rows by 1,024
columns by 8 bits.
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of an AC-
TIVE command which is then followed by a READ or WRITE
command. The address bits registered coincident with the
ACTIVE command are used to select the bank and row to
be accessed
(BA0 and BA1 select the bank, A0-A12 select the row)
.
The address bits
A0-A9 (x8); A0-A8 (x16)
registered coincident
with the READ or WRITE command are used to select the
starting column location for the burst access.
Prior to normal operation, the SDRAM must be initialized.
The following sections provide detailed information covering
device initialization, register definition, command
descriptions and device operation.
Initialization
SDRAMs must be powered up and initialized in a
predefined manner.
The 256Mb SDRAM is initialized after the power is applied
to V
DD
and V
DDQ
(simultaneously) and the clock is stable
with DQM High and CKE High.
A 200μs delay is required prior to issuing any command
other than a
COMMAND INHIBIT
or a
NOP
. The COMMAND
INHIBIT or NOP may be applied during the 200us period and
should continue at least through the end of the period.
With at least one COMMAND INHIBIT or NOP command
having been applied, a PRECHARGE command should be
applied once the 200μs delay has been satisfied. All banks
must be precharged. This will leave all banks in an idle state
after which at least eight
AUTO REFRESH
cycles must be
performed. After the
AUTO REFRESH
cycles are complete,
the SDRAM is then ready for mode register programming.
The mode register should be loaded prior to applying any
operational command because it will power up in an un-
known state.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S16160B-6T | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| IS42S16160B-6TL | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| IS42S16160B-7B | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| IS42S16160B-7BI | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| IS42S16160B-7BL | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16160B-6B | 功能描述:動態(tài)隨機(jī)存取存儲器 256M (16Mx16) 166MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16160B-6BL | 功能描述:動態(tài)隨機(jī)存取存儲器 256M (16Mx16) 166MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16160B-6BLI | 功能描述:動態(tài)隨機(jī)存取存儲器 256M (16Mx16) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16160B-6BLI-TR | 功能描述:動態(tài)隨機(jī)存取存儲器 256M (16Mx16) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16160B-6BL-TR | 功能描述:動態(tài)隨機(jī)存取存儲器 256M (16Mx16) 166MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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