參數(shù)資料
型號(hào): IS42S16100C1
廠商: Integrated Silicon Solution, Inc.
英文描述: 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 為512k字× 16位× 2銀行(16兆)同步動(dòng)態(tài)RAM
文件頁(yè)數(shù): 32/79頁(yè)
文件大小: 755K
代理商: IS42S16100C1
IS42S16100C1
ISSI
32
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
07/21/04
Read Cycle (Full Page) Interruption Using
the Burst Stop Command
The IS42S16100C1 can output data continuously from the
burst start address (a) to location a+255 during a read cycle
in which the burst length is set to full page. The
IS42S16100C1 repeats the operation starting at the 256th
cycle with the data output returning to location (a) and
continuing with a+1, a+2, a+3, etc. A burst stop command
must be executed to terminate this cycle. A precharge
command must be executed within the ACT to PRE
command period (t
RAS
max.) following the burst stop
command.
After the period (t
RBD
) required for burst data output to
stop following the execution of the burst stop command
has elapsed, the outputs go to the HIGH impedance
state. This period (t
RBD
) is two clock cycle when the
CAS
latency is two and three clock cycle when the
CAS
latency is three.
CAS
Latency
t
RBD
3
3
2
2
BST
READ A0
COMMAND
DQ
CLK
t
RBD
READ (CA=A, BANK 0)
BURST STOP
HI-Z
D
OUT
A0
D
OUT
A0
D
OUT
A1
D
OUT
A2
COMMAND
DQ
CLK
t
RBD
READ A0
READ (CA=A, BANK 0)
BURST STOP
BST
HI-Z
D
OUT
A0
D
OUT
A0
D
OUT
A1
D
OUT
A2
D
OUT
A3
D
OUT
A3
C
A
S
latency = 3, burstlength = 4
CAS
latency = 2, burstlength = 4
相關(guān)PDF資料
PDF描述
IS42S16100C1-5T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-5TL 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-6T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-6TL 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-7T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S16100C1_07 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-5T 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1Mx16 200Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S16100C1-5TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1Mx16 200Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S16100C1-5TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1Mx16 200Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S16100C1-5T-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1Mx16 200Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube