參數(shù)資料
型號(hào)： IS42G32256-10PQ
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
中文描述： 512K X 32 SYNCHRONOUS GRAPHICS RAM, 7 ns, PQFP100
封裝： 14 X 20 MM , PLASTIC, QFP-100
文件頁(yè)數(shù)： 30/52頁(yè)
文件大小： 456K
代理商： IS42G32256-10PQ
IS42G32256
30
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION
SR037-0C
09/10/98
ISSI
Table 19. DC Electrical Characteristics
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Speed
Min.
Max.
Unit
μ
A
I
IL
Input Leakage Current
0V < V
IN
< V
CC
, with pins other than
the tested pin at 0V
Output is disabled
0V < V
OUT
< V
CC
I
OUT
= –2 mA
I
OUT
= +2 mA
One Bank Operation, Burst Length=1
t
RC
≥
t
RC
(min), I
OL
= 0 mA
t
CK
≥
t
CK
(min)
CKE
≤
V
IL
(max)
–5
5
I
OL
Output Leakage Current
–5
5
μ
A
V
OH
V
OL
I
CC
1
Output High Voltage Level
Output Low Voltage Level
Operating Current
(1,2)
2.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.4
145
180
170
3
2
30
15
3
2
50
30
195
170
140
195
170
140
195
170
140
2
190
180
170
V
V
-7
-8
-10
mA
I
CC
2P
I
CC
2PS
I
CC
2N
I
CC
2NS
I
CC
3P
I
CC
3PS
I
CC
3N
I
CC
3NS
I
CC
4
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Operating Current
(In Burst Mode)
(1)
t
CK
= t
CK
(min)
t
CK
=
∞
t
CK
= t
CK
(min)
t
CK
=
∞
t
CK
= t
CK
(min)
t
CK
=
∞
t
CK
= t
CK
(min)
t
CK
=
∞
CAS
latency = 3
mA
CKE
≥
V
IH
(min)
mA
CKE
≤
V
IL
(max)
mA
CKE
≥
V
IH
(min)
mA
t
CK
= t
CK
(min)
I
OL
= 0 mA
All banks activated
-7
-8
-10
-7
-8
-10
-7
-8
-10
mA
CAS
latency = 2
mA
I
CC
5
Auto-Refresh Current
t
RC
= t
RC
(min)
mA
I
CC
6
I
CC
7
Self-Refresh Current
Operating Current
(one Bank Block Write)
CKE
≤
0.2V
t
RC
≥
t
RC
(min)
mA
mA
I
OL
= 0 mA, t
BWC
(min) -7
-8
-10
Notes:
1.
These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01
μ
F should be inserted between Vcc and GND for each memory
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.
2.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42G32256-7PQ 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
IS42G32256-8PQ 制造商:Integrated Silicon Solution Inc 功能描述:
IS42K 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC NPN NC
IS42KS 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC NPN NC
IS42L 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC NPN NC
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