參數(shù)資料
型號(hào)： IS41LV32256
廠商： Integrated Silicon Solution, Inc.
英文描述： 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32帶擴(kuò)展數(shù)據(jù)輸出動(dòng)態(tài)RAM)
中文描述： 256K × 32（8兆位），江戶內(nèi)存3.3伏，100/83/66兆赫（3.3伏，100/83/66兆赫，256K × 32帶擴(kuò)展數(shù)據(jù)輸出動(dòng)態(tài)內(nèi)存）
文件頁(yè)數(shù)： 7/19頁(yè)
文件大小： 156K
代理商： IS41LV32256
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
7
IS41LV32256
ISSI
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-28
-30
-35
Symbol
t
CLZ
t
CRP
t
OD
t
OE
t
OEHC
t
OEP
t
OES
t
RCS
t
RRH
Parameter
CAS
to Output in Low-Z
(15, 29)
CAS
to RAS Precharge Time
(21)
Output Disable Time
(19, 28, 29)
Output Enable Time
(15, 16)
OE
HIGH Hold Time from
CAS
HIGH
OE
HIGH Pulse Width
OE
LOW to
CAS
HIGH Setup Time
Read Command Setup Time
(17, 20)
Read Command Hold Time
(referenced to
RAS
)
(12)
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
Write Command Hold Time
(17, 27)
Write Command Hold Time
(referenced to
RAS
)
(17)
Write Command Pulse Width
(17)
WE
Pulse Widths to Disable Outputs
Write Command to
RAS
Lead Time
(17)
Write Command to
CAS
Lead Time
(17, 21)
Write Command Setup Time
(14, 17, 20)
Data-in Hold Time (referenced to
RAS
)
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
Data-In Setup Time
(15, 22)
Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
CAS
to
WE
Delay Time
(14, 20)
Column-Address to
WE
Delay Time
(14)
EDO Page Mode READ or WRITE
Cycle Time
(24)
RAS
Pulse Width in EDO Page Mode
Access Time from
CAS
Precharge
(15)
EDO Page Mode READ-WRITE
Cycle Time
(24)
Data Output Hold after
CAS
LOW
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 29)
Output Disable Delay from
WE
Min.
3
5
3
—
10
10
5
0
0
Max.
—
—
15
9
—
—
—
—
—
Min.
3
5
3
—
10
10
5
0
0
Max.
—
—
15
9
—
—
—
—
—
Min.
3
5
3
—
10
10
5
0
0
Max.
—
—
15
10
—
—
—
—
—
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RCH
0
—
0
—
0
—
ns
t
WCH
t
WCR
5
21
—
—
5
22
—
—
5
24
—
—
ns
ns
t
WP
t
WPZ
t
RWL
t
CWL
t
WCS
t
DHR
t
ACH
5
10
7
5
0
21
15
—
—
—
—
—
—
—
5
10
7
5
0
22
15
—
—
—
—
—
—
—
6
10
8
8
0
24
15
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
t
OEH
5
—
5
—
6
—
ns
t
DS
t
DH
t
RWC
t
RWD
0
5
73
40
—
—
—
—
0
5
73
40
—
—
—
—
0
6
80
45
—
—
—
—
ns
ns
ns
ns
t
CWD
t
AWD
t
PC
18
24
12
—
—
—
18
25
12
—
—
—
20
30
15
—
—
—
ns
ns
ns
t
RASP
t
CPA
t
PRWC
28
—
34
100K
17
—
30
—
35
100K
18
—
35
—
40
100K
21
—
ns
ns
ns
t
CHO
t
OFF
3
3
—
7
3
3
—
7
3
3
—
15
ns
ns
t
WHZ
3
10
3
10
3
15
ns
(Continued)
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IS42G32256-10PQ 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
IS42G32256-7PQ POT 10K OHM 9MM VERT NO BUSHING
IS42G32256-8PQ 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS41LV32256-28PQ 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
IS41LV32256-28TQ 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
IS41LV32256-30PQ 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x32 EDO Page Mode DRAM
IS41LV32256-30TQ 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
IS41LV32256-35PQ 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
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