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參數(shù)資料
| 型號(hào)： | IS41LV1665 |
| 英文描述： | 64K x16 bit Dynamic RAM with Fast Page Mode |
| 中文描述： | 64K的x16位動(dòng)態(tài)隨機(jī)存儲(chǔ)器和快速頁(yè)面模式 |
| 文件頁(yè)數(shù)： | 9/19頁(yè) |
| 文件大?。?/td> | 388K |
| 代理商： | IS41LV1665 |
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IC41C1665
IC41LV1665
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
9
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-25
-30
-35
-40
Symbol Parameter
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Units
t
ACH
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
Data-In Setup Time
(15, 22)
Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
CAS
to
WE
Delay Time
(14, 20)
Column-Address to
WE
Delay Time
(14)
Fast Page Mode READ or WRITE
Cycle Time
(24)
Fast Page Mode
RAS
Pulse Width
Access Time from
CAS
Precharge
(15)
Fast Page Mode READ-WRITE Cycle Time
(24)
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 29)
Last
CAS
going LOW to First
CAS
returning HIGH
(23)
CAS
Setup Time (CBR REFRESH)
(30, 20)
CAS
Hold Time (CBR REFRESH)
(30, 21)
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
Refresh Period (256 Cycles)
Transition Time (Rise or Fall)
(2, 3)
15
—
15
—
15
—
15
—
ns
t
OEH
4
—
4
—
4
—
5
—
ns
t
DS
t
DH
t
RWC
t
RWD
0
5
—
—
—
—
0
5
—
—
—
—
0
5
—
—
—
—
0
5
—
—
—
—
ns
ns
ns
ns
65
34
85
46
95
51
105
56
t
CWD
t
AWD
t
PC
17
21
15
—
—
—
25
32
20
—
—
—
26
34
23
—
—
—
27
36
25
—
—
—
ns
ns
ns
t
RASP
t
CPA
t
PRWC
t
OFF
25
—
37
3
10k
14
—
15
30
—
42
3
10K
18
—
15
35
—
49
3
10K
20
—
15
40
—
52
3
10K
22
—
15
ns
ns
ns
ns
t
CLCH
4
—
9
—
10
—
11
—
ns
t
CSR
t
CHR
t
ORD
5
7
0
—
—
—
10
10
0
—
—
—
10
10
0
—
—
—
10
10
0
—
—
—
ns
ns
ns
t
REF
t
T
—
1
4
50
—
1
4
—
1
4
—
1
4
50
ms
ns
50
50
AC TEST CONDITIONS
Output load:
Two TTL Loads and 50 pF (Vcc = 5.0V ±10%)
One TTL Load and 50 pF (Vcc = 3.3V ±10%)
Input timing reference levels: V
IH
= 2.4V, V
IL
= 0.8V (Vcc = 5.0V ±10%);
V
IH
= 2.0V, V
IL
= 0.8V (Vcc = 3.3V ±10%)
Output timing reference levels: V
OH
= 2.0V, V
OL
= 0.8V (Vcc = 5V ±10%, 3.3V ±10%)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV1665-40K | 64K x16 bit Dynamic RAM with Fast Page Mode |
| IS41LV44002-50JI | x4 EDO Page Mode DRAM |
| IS41LV44002-50T | x4 EDO Page Mode DRAM |
| IS41LV44002-50TI | x4 EDO Page Mode DRAM |
| IS41LV44002-60J | x4 EDO Page Mode DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV1665-40K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x16 bit Dynamic RAM with Fast Page Mode |
| IS41LV32256 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-28PQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-28TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-30PQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 EDO Page Mode DRAM |
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