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參數(shù)資料
| 型號： | IS41LV16256-60T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 256K X 16 EDO DRAM, 60 ns, PDSO40 |
| 封裝： | 0.400 INCH, MS-24, TSOP2-40/44 |
| 文件頁數(shù)： | 7/19頁 |
| 文件大小： | 153K |
| 代理商： | IS41LV16256-60T |
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. J
06/29/00
7
IS41C16256
IS41LV16256
ISSI
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-35
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max
Min.
Max.
Units
t
RC
Random READ or WRITE Cycle Time
60
—
90
—
110
—
ns
t
RAC
Access Time from
RAS
(6, 7)
35
—
50
—
60
ns
t
CAC
Access Time from
CAS
(6, 8, 15)
—
10
—
14
—
15
ns
t
AA
Access Time from Column-Address
(6)
—
18
—
25
—
30
ns
t
RAS
RAS
Pulse Width
35
10K
50
10K
60
10K
ns
t
RP
RAS
Precharge Time
20
—
30
—
40
—
ns
t
CAS
CAS
Pulse Width
(26)
6
10K
8
10K
10
10K
ns
t
CP
CAS
Precharge Time
(9, 25)
5
—
8
—
10
—
ns
t
CSH
CAS
Hold Time
(21)
35
—
50
—
60
—
ns
t
RCD
RAS
to
CAS
Delay Time
(10, 20)
11
28
19
36
20
45
ns
t
ASR
Row-Address Setup Time
0
—
0
—
0
—
ns
t
RAH
Row-Address Hold Time
6
—
8
—
10
—
ns
t
ASC
Column-Address Setup Time
(20)
0
—
0
—
0
—
ns
t
CAH
Column-Address Hold Time
(20)
6
—
8
—
10
—
ns
t
AR
Column-Address Hold Time
(referenced to
RAS
)
30
—
40
—
40
—
ns
t
RAD
RAS
to Column-Address Delay Time
(11)
10
20
14
25
15
30
ns
t
RAL
Column-Address to
RAS
Lead Time
18
—
25
—
30
—
ns
t
RPC
RAS
to
CAS
Precharge Time
0
—
0
—
0
—
ns
t
RSH
RAS
Hold Time
(27)
8
—
14
—
15
—
ns
t
CLZ
CAS
to Output in Low-Z
(15, 29)
3
—
3
—
3
—
ns
t
CRP
CAS
to
RAS
Precharge Time
(21)
5
—
5
—
5
—
ns
t
OD
Output Disable Time
(19, 28, 29)
3
12
3
12
3
12
ns
t
OE
/ t
OEA
Output Enable Time
(15, 16)
0
10
0
15
—
15
ns
t
OEHC
OE
HIGH Hold Time from
CAS
HIGH
10
—
10
—
10
—
ns
t
OEP
OE
HIGH Pulse Width
10
—
10
—
10
—
ns
t
OES
OE
LOW to
CAS
HIGH Setup Time
5
—
5
—
5
—
ns
t
RCS
Read Command Setup Time
(17, 20)
0
—
0
—
0
—
ns
t
RRH
Read Command Hold Time
(referenced to
RAS
)
(12)
0
—
0
—
0
—
ns
t
RCH
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
0
—
0
—
0
—
ns
t
WCH
Write Command Hold Time
(17, 27)
5
—
8
—
10
—
ns
t
WCR
Write Command Hold Time
(referenced to
RAS
)
(17)
30
—
40
—
50
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV16256-60TI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256 | 256K x 16 DRAM With EDO Page Mode(3.3V,256K x 16 帶擴(kuò)展數(shù)據(jù)輸出頁模式動態(tài)RAM) |
| IS41LV16257 | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16257 | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16257-35K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16256-60TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256B-35K | 功能描述:動態(tài)隨機(jī)存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16256B-35KL | 功能描述:動態(tài)隨機(jī)存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16256B-35KL-TR | 功能描述:動態(tài)隨機(jī)存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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