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參數(shù)資料
| 型號(hào)： | IS41LV16256-35K |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 256K X 16 EDO DRAM, 35 ns, PDSO40 |
| 封裝： | 0.400 INCH, MS-027, SOJ-40 |
| 文件頁(yè)數(shù)： | 3/19頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | IS41LV16256-35K |
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Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. J
06/29/00
3
IS41C16256
IS41LV16256
ISSI
TRUTH TABLE
Function
RAS
LCAS
UCAS
WE
OE
Address t
R
/t
C
I/O
Standby
H
H
H
X
X
X
High-Z
Read: Word
L
L
L
H
L
ROW/COL
D
OUT
Read: Lower Byte
L
L
H
H
L
ROW/COL
Lower Byte, D
OUT
Upper Byte, High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, D
OUT
Write: Word (Early Write)
L
L
L
L
X
ROW/COL
D
IN
Write: Lower Byte (Early Write)
L
L
H
L
X
ROW/COL
Lower Byte, D
IN
Upper Byte, High-Z
Write: Upper Byte (Early Write)
L
H
L
L
X
ROW/COL
Lower Byte, High-Z
Upper Byte, D
IN
Read-Write
(1,2)
L
L
L
H
→
L
H
H
H
L
→
H
L
L
L
ROW/COL
D
OUT
, D
IN
EDO Page-Mode Read
(2)
1st Cycle:
L
L
L
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
L
L
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
L
L
ROW/COL
NA/COL
NA/NA
D
OUT
D
OUT
D
OUT
2nd Cycle:
Any Cycle:
EDO Page-Mode Write
(1)
1st Cycle:
L
L
L
L
X
X
ROW/COL
NA/COL
D
IN
D
IN
2nd Cycle:
EDO Page-Mode
Read-Write
(1,2)
1st Cycle:
2nd Cycle:
Read L
→
H
→
L
Write L
→
H
→
L
L
L
H
→
L
H
→
L
H
L
L
→
H
L
→
H
L
X
ROW/COL
NA/COL
D
OUT
, D
IN
D
OUT
, D
IN
Hidden Refresh
2)
ROW/COL
ROW/COL
D
OUT
D
OUT
RAS
-Only Refresh
L
H
H
X
X
ROW/NA
High-Z
CBR Refresh
(3)
H
→
L
L
L
X
X
X
High-Z
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS
or
UCAS
active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS
or
UCAS
active).
3. At least one of the two
CAS
signals must be active (
LCAS
or
UCAS
).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV16256-35T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60KI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60TI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16256-35T | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip EDO 4M-Bit 256Kx16 3.3V 40-Pin TSOP-II |
| IS41LV16256-50K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-50T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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