參數(shù)資料
型號(hào): IRSF3010
廠商: International Rectifier
英文描述: FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=80mohm)
中文描述: 充分保護(hù)功率MOSFET開關(guān)(譏\u003d 50V的的Rds(on)\u003d 80mohm)
文件頁數(shù): 2/11頁
文件大?。?/td> 483K
代理商: IRSF3010
IRSF3010
2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc =
25°C unless otherwise specified.)
Symbol
Parameter Definition
Min.
Max.
Test Conditions
Vds, max
Vin, max
Ids
Pd
Continuous Drain to Source Voltage — 50
Continuous Input Voltage -0.3
10
Continuous Drain Current —
self limited
Power Dissipation
Linear Derating Factor for Tc > 25
°
C
Unclamped Single Pulse Inductive Energy
40
W
Tc
25°C
0.33 W/°C
EAS
Vesd1
Vesd2
T
Jop
T
Stg
T
L
400
mJ
Electrostatic Discharge Voltage (Human Body Model)
4000
1000pF. 1.5k
200pF, 0
(Machine Model)
1000
Junction Temperature
-55
self-limited
Storage Temperature
-55
175
Lead Temperature (Soldering, 10 seconds)
300
Thermal Characteristics
Units
V
V
o
C
Symbol
Vds,clamp
Parameter Definition
Drain to Source Clamp Voltage
Min. Typ. Max. Units
50
54
Test Conditions
Ids = 10mA
Ids = 11A, tp = 700
μ
S
Vin = 5V, Ids = 4A
Vin = 4V, Ids = 4A
Vin = 10V, Ids = 4A
Vds = 12V, Vin = 0V
Vds = 50V, Vin = 0V
Vds=40V,Vin=0V,Tc=150
o
C
Vds = 5V, Ids = 1mA
Vin = 5V
Vin = 10V
Vin = 5V
Vin = 10V
Iin = 10mA
Ids = -17A, Rin = 1k
56
62
Rds(on)
Drain to Source On Resistance
70
80
85
53
Idss
Drain to Source Leakage Current
10
100
10
250
Vth
Ii, on
Input Threshold Voltage
1.5
2.0
2.5
V
Input Supply Current (Normal Operation)
0.25
0.6
0.35
0.85
Ii, off
Input Supply Current (Protection Mode)
0.5
1.0
0.6
1.2
Vin, clamp
Vsd
Input Clamp Voltage
10
10.8
Body-Drain Diode Forward Drop
1.2
1.5
Static Electrical Characteristics
(Tc = 25°C unless otherwise specified.)
V
m
μ
A
mA
V
Symbol
Parameter Definition
Min. Typ. Max. Units
Test Conditions
R
Θ
jc
R
Θ
jA
Thermal Resistance, Junction to Case
3.0
°C/W
Thermal Resistance, Junction to Ambient
60
°C/W
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