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參數(shù)資料
| 型號(hào)： | IRS2111PBF |
| 廠商： | International Rectifier |
| 英文描述： | HALF-BRIDGE DRIVER |
| 中文描述： | 半橋驅(qū)動(dòng)器 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 306K |
| 代理商： | IRS2111PBF |
IRS2111(S)PbF
www.irf.com
3
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
6.4
—
—
V
CC
= 10 V
V
IH
Logic “1” input voltage for HO & logic “0” for LO
9.5
—
—
V
CC
= 15 V
12.6
—
—
V
CC
= 20 V
—
—
3.8
V
CC
= 10 V
V
IL
Logic “0” input voltage for HO & logic “1” for LO
—
—
6.0
V
CC
= 15 V
—
—
8.3
V
CC
= 20 V
V
OH
High level output voltage, V
BIAS
- V
O
—
0.05
0.2
V
OL
Low level output voltage, V
O
—
0.02
0.1
I
LK
Offset supply leakage current
—
—
50
V
B
= V
S
= 600 V
I
QBS
Quiescent V
BS
supply current
—
50
100
I
QCC
Quiescent V
CC
supply current
—
70
180
I
IN+
Logic “1” input bias current
—
30
50
V
IN
= V
CC
I
IN-
Logic “0” input bias current
—
—
1.0
V
IN
= 0 V
V
BSUV+
V
BS
supply undervoltage positive going threshold
7.6
8.6
9.6
V
BSUV-
V
BS
supply undervoltage negative going threshold
7.2
8.2
9.2
V
CCUV+
V
CC
supply undervoltage positive going threshold
7.6
8.6
9.6
V
CCUV-
V
CC
supply undervoltage negative going threshold
7.2
8.2
9.2
I
O+
Output high short circuit pulsed current
200
290
—
V
O
= 0 V, V
IN
= V
CC
PW
≤
10
μ
s
I
O-
Output low short circuit pulsed current
420
600
—
V
O
= 15 V, V
IN
= 0 V
PW
≤
10
μ
s
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V and T
A
= 25
°
C unless otherwise specified. The V
IN
, V
TH,
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
mV
mA
V
V
μ
A
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
ton
Turn-on propagation delay
550
750
950
V
S
= 0 V
toff
Turn-off propagation delay
—
150
180
V
S
= 600 V
tr
Turn-on rise time
—
75
130
tf
Turn-off fall time
—
35
65
DT
Deadtime, LS turn-off to HS turn-on &
480
650
820
HS turn-off to LS turn-on
MT
Delay matching, HS & LS turn-on/off
—
30
—
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, C
L
= 1000 pF and T
A
= 25
°
C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Fig. 3.
ns
V
IN
= 0 V or V
CC
I
O
= 2 mA
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|---|---|
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| IRS2112-2PBF | HIGH AND LOW SIDE DRIVER |
| IRS2112PBF | HIGH AND LOW SIDE DRIVER |
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| IRS2112-2PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER |
| IRS2112PBF | 功能描述:功率驅(qū)動(dòng)器IC Hi&Lw Sd Drvr ShutDwn Inpt RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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