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參數(shù)資料
| 型號(hào)： | IRS20955PBF |
| 廠商： | International Rectifier |
| 英文描述： | PROTECTED DIGITAL AUDIO DRIVER |
| 中文描述： | 受保護(hù)的數(shù)字音頻驅(qū)動(dòng)程序 |
| 文件頁數(shù)： | 14/21頁 |
| 文件大小： | 524K |
| 代理商： | IRS20955PBF |
IRS20955
(
S
)
PbF
PRELIMINARY
www.irf.com
14
VS
OC
+
-
IRS20955
CSH
Comparator
-B
+B
OUT
Q1
Q2
HO
LO
HO
R1
R2
R3
D1
VB
CSH
Vcc
1.2V
Figure 14. Programming High-Side Over-Current Threshold
High-Side Over-Current Setting
Figure 14 demonstrates the typical circuitry used for
high-side current sensing. In the following example,
the over current protection level is set to trip at 30 A
using a MOSFET with an R
DS(ON)
of 100 m
. The
component values of R2 and R3 can be calculated
using the following formula:
Let R2 + R3=10 k
.
F
DS
OCH
+
V
V
Vth
k
R
=
10
3
where Vth
OCL
= 1.2 V
V
F
= the forward voltage of reverse blocking
diode D1 = 0.6 V.
V
DS@ID=30A
= the voltage drop across the
high-side MOSFET when the MOSFET current is 30
A.
Therefore, V
DS@ID=30A
= I
D
x R
DS(ON)
= 30 A x 100 m
= 3 V
Based on the formulas above, R2 = 6.8 k
and R3
= 3.3 k
.
Choosing the Right Reverse Blocking Diode
The selection of the appropriate reverse blocking
diode used in place of D1 depends on its voltage
rating and speed. To effectively block bus voltages,
the reverse voltage must be higher than the voltage
difference between +B and -B and the reverse
recovery time must be as fast as the boot strap
charging diode. A diode such as the Philips BAV21
W, a 200 V, 50 ns high speed switching diode, is
more than sufficient.
Deadtime Generator
Deadtime is a blanking period inserted between
high-side turn on and low-side turn on to prevent
shoot through. In the IRS20955S, an internal dead-
time generation block allows the user to select the
optimum deadtime from a range of preset values.
Selecting a preset deadtime through the DT/SD pin
voltage can easily be done through an external
voltage divider. This way of setting deadtime
prevents outside noise from modulating the
switching timing, which is critical to the audio
performances.
How to Determine Optimal Deadtime
The effective deadtime in an actual application
differs from the deadtime specified in this datasheet
due to the switching fall time,
t
f
.
. The deadtime value
in this datasheet is defined as the time period
between the beginning of turn-off on one side of the
switching stage and the beginning of turn-on on the
other side as shown in Figure 15. The fall time of
MOSFET gate voltage must be subtracted from the
deadtime value in the datasheet to determine the
effective deadtime of a Class D audio amplifier.
(Effective deadtime) = (Deadtime in datasheet) –
t
f
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRS20955SPBF | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS20955STRPBF | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS20957SPBF | 功能描述:功率驅(qū)動(dòng)器IC Prot DIG Audio DRVR 100V 1.0A 500ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS20957SPBF | 制造商:International Rectifier 功能描述:IC MOSFET DRIVER HIGH-SPEED SOIC-16 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HIGH-SPEED, SOIC-16 |
| IRS20957STRPBF | 功能描述:功率驅(qū)動(dòng)器IC Class D Aud Drvr IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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