參數(shù)資料
型號(hào)： IRLZ44ZSPBF
廠(chǎng)商： International Rectifier
英文描述： AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5mヘ , ID = 51A)
中文描述： 汽車(chē)MOSFET的（減振鋼板基本\u003d 55V的，的RDS（on）\u003d 1350ヘ，身份證\u003d 51A條）
文件頁(yè)數(shù)： 2/13頁(yè)
文件大?。?/td> 366K
代理商： IRLZ44ZSPBF
2
www.irf.com
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Min.
55
–––
–––
–––
–––
1.0
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.05
–––
11
13.5
–––
20
–––
22.5
–––
3.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
24
36
7.5
–––
12
–––
14
–––
160
–––
25
–––
42
–––
4.5
–––
V
V/°C
m
m
m
V
V
μA
V
GS(th)
gfs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
Between lead,
nH
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
1620
230
130
860
180
280
–––
–––
–––
–––
–––
–––
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Min.
–––
Typ. Max. Units
–––
51
A
–––
–––
204
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
21
16
1.3
32
24
V
ns
nC
Conditions
V
GS
= 5.0V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 31A, V
GS
= 0V
T
J
= 25°C, I
F
= 31A, V
DD
= 28V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 31A
V
GS
= 5.0V, I
D
= 30A
V
GS
= 4.5V, I
D
= 15A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 31A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
V
GS
= 0V, V
DS
= 0V to 44V
V
GS
= 5.0V
V
DD
= 50V
I
D
= 31A
R
G
= 7.5
I
D
= 31A
V
DS
= 44V
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