參數(shù)資料
型號(hào)： IRLZ34NS
廠(chǎng)商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 62K
代理商： IRLZ34NS
Philips Semiconductors
Product specification
N-channel enhancement mode
Logic level TrenchMOS
TM
transistor
IRLZ34N
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)GSS
Gate-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
10
TYP. MAX. UNIT
-
-
-
-
-
-
V
V
V
T
j
= -55C
I
G
=
±
1 mA;
V
DS
= V
GS
; I
D
= 1 mA
1.0
0.5
-
-
-
-
12
-
-
-
-
1.5
-
-
28
26
-
40
0.02
-
0.05
-
2.0
-
2.3
46
35
74
-
1
20
10
500
V
V
V
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 5 V; I
D
= 17 A
V
GS
= 10 V; I
D
= 17 A
m
m
m
S
μ
A
μ
A
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
nH
nH
T
j
= 175C
g
fs
I
GSS
Forward transconductance
Gate source leakage current V
GS
=
±
5 V; V
DS
= 0 V
V
DS
= 25 V; I
D
= 15 A
T
j
= 175C
I
DSS
Zero gate voltage drain
current
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
I
D
= 30 A; V
DD
= 44 V; V
GS
= 5 V
-
-
-
-
-
-
-
-
-
22.5
6
11
14
77
55
48
3.5
4.5
-
-
-
V
DD
= 30 V; I
D
= 25 A;
V
= 5 V; R
= 10
Resistive load
21
110
80
65
-
-
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1050
205
113
1400
245
150
pF
pF
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
30
A
-
-
110
A
I
F
= 25 A; V
GS
= 0 V
I
F
= 34 A; V
GS
= 0 V
I
F
= 34 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
0.95
1.0
40
0.16
1.2
-
-
-
V
V
ns
μ
C
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
February 1999
2
Rev 1.000
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參數(shù)描述
IRLZ34NSL 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:HEXFET?? Power MOSFET
IRLZ34NSPBF 功能描述:MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLZ34NSPBF 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes
IRLZ34NSTRL 制造商:International Rectifier 功能描述:
IRLZ34NSTRLPBF 功能描述:MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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