參數(shù)資料
型號： IRLZ14L
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 60V的，的Rds（on）\u003d 0.20ohm，身份證\u003d 10A條）
文件頁數(shù)： 2/10頁
文件大小： 291K
代理商： IRLZ14L
IRLZ14S/L
V
DD
= 25V
,
starting T
J
= 25°C, L = 790μH
R
G
= 25
, I
AS
= 10A. (See Figure 12)
I
SD
≤
10A, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRLZ14 data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
T
J
= 25°C, I
F
= 10A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
93
340
1.6
130
650
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
10
40
S
D
G
Parameter
Min. Typ. Max. Units
60
–––
–––
0.07
–––
–––
–––
–––
1.0
–––
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.3
–––
110
–––
17
–––
26
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 5.0V, I
D
= 6.0A
V
GS
= 4.0V, I
D
= 5.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 6.0A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
V
GS
= 10V
V
GS
= -10V
I
D
= 10A
V
DS
= 48V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 30V
I
D
= 10A
R
G
= 12
R
D
= 2.8
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
0.2
0.28
2.0
–––
25
250
100
-100
8.4
3.5
6.0
–––
–––
–––
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
400
170
42
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
7.5
nH
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