參數(shù)資料
型號: IRLW530A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: ADVANCED POWER MOSFET
中文描述: 14 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: D2PAK-3
文件頁數(shù): 6/9頁
文件大?。?/td> 273K
代理商: IRLW530A
IRLW/I530A
6
1&+$11(/
32:(5 026)(7
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
10V
V
GS
( Driver )
I
S
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
f
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Period
-Gate Pulse Width
DUT
V
DS
+
--
L
I
S
Driver
V
GS
R
G
Same Type
as DUT
V
GS
dv/dt controlled by R
G
I
S
controlled by Duty Factor D
V
DD
相關(guān)PDF資料
PDF描述
IRLI530A ADVANCED POWER MOSFET
IRLWI530A Advanced Power MOSFET
IS205X1 LOW INPUT CURRENT NON-BASE LEAD PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATOR
IS205X2 LOW INPUT CURRENT NON-BASE LEAD PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATOR
IS205X3 LOW INPUT CURRENT NON-BASE LEAD PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLW530ATM 功能描述:MOSFET 100V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLW540A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET
IRLW540ATM 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLW610A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET
IRLW610ATM 功能描述:MOSFET 200V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube