- 您現在的位置：買賣IC網 > PDF目錄379241 > IRLW510A (FAIRCHILD SEMICONDUCTOR CORP) ADVANCED POWER MOSFET PDF資料下載
參數資料
| 型號： | IRLW510A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | ADVANCED POWER MOSFET |
| 中文描述： | 5.6 A, 100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 268K |
| 代理商： | IRLW510A |
IRLW/I510A
BV
DSS
= 100 V
R
DS(on)
= 0.44
I
D
= 5.6 A
100
5.6
4.0
20
±
20
62
5.6
3.7
6.5
3.8
37
0.25
- 55 to +175
300
4.1
40
62.5
--
--
--
1
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175
°
C Operating Temperature
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.336
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
A
=25
°
C)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
°
C
A
°
C
*
1999 Fairchild Semiconductor Corporation
Rev. B
相關PDF資料 |
PDF描述 |
|---|---|
| IRLI510A | ADVANCED POWER MOSFET |
| IRLWI510A | Advanced Power MOSFET |
| IRLW530A | ADVANCED POWER MOSFET |
| IRLI530A | ADVANCED POWER MOSFET |
| IRLWI530A | Advanced Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRLW510ATM | 功能描述:MOSFET 100V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLW520A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLW520ATM | 功能描述:MOSFET 100V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLW530A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET |
| IRLW530ATM | 功能描述:MOSFET 100V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。